SBAK016 July 2022 ADS1278-SP
A new device can be qualified either by performing full-scale quality and reliability test on the actual device or using previously qualified devices through qualification by similarity (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests are eliminated, allowing for timely production release. When adopting the QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration. The QBS rules for a technology, product, test parameter, or package shall define which attributes are required to remain fixed in order for the QBS rules to apply. The attributes that are expected and allowed to vary are reviewed and a QBS plan shall be developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device shall be reviewed for the conformance to the QBS rule sets applicable to the device. See JEDEC JESD47 for more information.
TI Device: | ADS1278MHFQ-MLS | Assembly Site: | Subcon- Microchip Tech (Thailand) | |
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DLA VID: | Not Applicable | Test Site: | TI-Taiwan | |
Wafer Fab: | TSMC-WF3 | Pin/Package Type: | Ceramic Quad Flatpack | 84 | |
Fab Process: | TSMC 0.35UM DPQM 3.3 V/5 V | Leadframe: | Not applicable for ceramic | |
Fab Technology: | TSMC 0.35UM | Termination Finish: | Au | |
Die Revision: | D | Bond Wire: | 25.4 µm Al | |
ESD CDM: | ±500 V | Moisture Sensitivity: | Not applicable for Ceramic | |
ESD HBM: | ±2000 V | |||
1Baseline information in effect as of the date of this report |
Note that qualification by similarity (“qualification family”) per JEDEC JESD47 is allowed | ||||
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Description | Condition | Sample Size Used/Rejects | Lots Required | Test Method |
Electromigration | Maximum Recommended Operating Conditions | N/A | N/A | Per TI Design Rules |
Electrical Characterization | TI Data Sheet | 30 | 1 | N/A |
Electrostatic Discharge Sensitivity | HBM | 3 units/voltage | 1 | EIA/JESD22-A114 |
CDM | EIA/JESD22-C101 | |||
Latch-up 25°C and 125°C | Per Technology | 6/0 | 1 | EIA/JESD78 |
C1 Life Test | 140°C / 500 hours or equivalent | 47/0 | 1 | MIL-STD-883/Method 1005 |
Temperature Cycle | –65°C to +150°C non-biased for 500 cycles | 15/0 | N/A | MIL-STD-883/TM1010, Cond C |
Visual Quality Reliability Inspection | Post Temp Cycle | 2/0 | 1 | Per TI Design Rules |
B2 Resistance to Solvents | Ink symbol only | 3/0 | 2 | MIL-STD-883/Method 2015 |
B3 Solderability | 245C +/-5%, 22 leads from each unit (3 unit minimum) | 3/0 | 1 | MIL-STD-883/Method 2003 |
B5 Bond Strength | Destructive Bond Pull Test, 15 wires pull from each unit (4 unit minimum) | 4/0 | 3 | MIL-STD-883/Method 2011 |
D3 Sequence | 15 Th/S+100 TC + Moist Resis | 15/0 | 3 | MIL-PRF-38535 |
D4 Sequence | Mech Shock + Vibration + Const Acc | 15/0 | 1 | MIL-PRF-38535 |
Die Shear | Per die size | 3/0 | 1 | MIL-STD-883/Method 2019 |
Radiation Response Characterization | Total Ionization Dose, and Single-Event Latch-up | 5 units/dose level | 1 | MIL-STD-883/Method 1019 |