SBAS654G June   2014  – January 2020

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics: AMC1305M05
    10. 7.10 Electrical Characteristics: AMC1305x25
    11. 7.11 Switching Characteristics
    12. 7.12 Insulation Characteristics Curves
    13. 7.13 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Analog Input
      2. 8.3.2 Modulator
      3. 8.3.3 Digital Output
    4. 8.4 Device Functional Modes
      1. 8.4.1 Fail-Safe Output
      2. 8.4.2 Output Behavior in Case of Full-Scale Input
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Digital Filter Usage
    2. 9.2 Typical Applications
      1. 9.2.1 Frequency Inverter Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Isolated Voltage Sensing
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

7.10 Electrical Characteristics: AMC1305x25

All minimum and maximum specifications at TA = –40°C to 125°C, AVDD = 4.5 V to 5.5 V, DVDD = 3.0 V to 5.5 V, AINP = –250 mV to 250 mV, AINN = 0 V, and sinc3 filter with OSR = 256, unless otherwise noted. Typical values are at TA = 25°C, CLKIN = 20 MHz, AVDD = 5.0 V, and DVDD = 3.3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUTS
VClipping  Maximum differential voltage input range
(AINP-AINN)		 ±312.5 mV
FSR Specified linear full-scale range
(AINP-AINN)		 –250 250 mV
VCM  Operating common-mode input range    –0.16 AVDD – 2 V
CID  Differential input capacitance 1 pF
IIB  Input current Inputs shorted to AGND –82 –60 –48 μA
RID  Differential input resistance 25 kΩ
IOS  Input offset current ±5 nA
CMTI Common-mode transient immunity 15 kV/μs
CMRR Common-mode rejection ratio fIN = 0 Hz,
VCM min ≤ VIN ≤ VCM max 		–95 dB
fIN from 0.1 Hz to 50 kHz,
VCM min ≤ VIN ≤ VCM max 		–76
BW Input bandwidth 1000 kHz
DC ACCURACY
DNL Differential nonlinearity Resolution: 16 bits –0.99 0.99 LSB
INL Integral nonlinearity(1) Resolution: 16 bits –4 ±1.5 4 LSB
EO  Offset error  Initial, at 25°C –150 ±40 150 µV
TCEO  Offset error thermal drift(2) –1.3 1.3 μV/°C
EG  Gain error  Initial, at 25°C –0.3 –0.02 0.3 %FS
TCEG  Gain error thermal drift(3) –40 ±20 40 ppm/°C
PSRR Power-supply rejection ratio VAVDD from 4.5 V to 5.5 V, at dc 90 dB
AC ACCURACY
SNR Signal-to-noise ratio fIN = 1 kHz 82 85 dB
SINAD Signal-to-noise + distortion fIN = 1 kHz 80 84 dB
THD Total harmonic distortion fIN = 1 kHz –90 –83 dB
SFDR Spurious-free dynamic range fIN = 1 kHz 83 92 dB
DIGITAL INPUTS/OUTPUTS
External Clock
fCLKIN  Input clock frequency 5 20 20.1 MHz
DutyCLKIN  Duty cycle 5 MHz ≤ fCLKIN ≤ 20.1 MHz 40% 50% 60%
CMOS Logic Family (AMC1305M25), CMOS with Schmitt-Trigger
IIN  Input current DGND ≤ VIN ≤ DVDD –1 1 μA
CIN  Input capacitance 5 pF
VIH  High-level input voltage 0.7 × DVDD DVDD + 0.3 V
VIL  Low-level input voltage –0.3 0.3 × DVDD V
CLOAD  Output load capacitance fCLKIN = 20 MHz 30 pF
VOH  High-level output voltage IOH = –20 µA DVDD – 0.1 V
IOH = –4 mA DVDD – 0.4
VOL  Low-level output voltage IOL = 20 µA 0.1 V
IOL = 4 mA 0.4
LVDS Logic Family (AMC1305L25)
VOD  Differential output voltage RLOAD = 100 Ω 250 350 450 mV
VOCM  Output common-mode voltage 1.125 1.23 1.375 V
IS  Output short-circuit current 24 mA
VICM  Input common-mode voltage VID = 100 mV 0.05 1.25 3.25 V
VID  Differential input voltage 100 350 600 mV
IIN  Input current DGND ≤ VIN ≤ 3.3 V –24 0 20 µA
POWER SUPPLY
AVDD High-side supply voltage 4.5 5.0 5.5 V
IAVDD  High-side supply current 6.5 8.2 mA
PAVDD  High-side power dissipation 32.5 45.1 mW
DVDD Controller-side supply voltage 3.0 3.3 5.5 V
IDVDD  Controller-side supply current AMC1305L25, RLOAD = 100 Ω 6.1 8.0 mA
AMC1305M25, 3.0 ≤ DVDD ≤ 3.6 V,
CLOAD = 5 pF		 2.7 4.0
AMC1305M25, 4.5 ≤ DVDD ≤ 5.5 V,
CLOAD = 5 pF		 3.2 5.5
PDVDD  Controller-side power dissipation AMC1305L25, RLOAD = 100 Ω 20.1 44.0 mW
AMC1305M25, 3.0 ≤ DVDD ≤ 3.6 V,
CLOAD = 5 pF		 8.9 14.4
AMC1305M25, 4.5 ≤ DVDD ≤ 5.5 V,
CLOAD = 5 pF		 16.0 30.3
(1) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer function expressed as the number of LSBs or as a percent of the specified linear full-scale range FSR.
(2) Offset error drift is calculated using the box method as described by the following equation: AMC1305L25 AMC1305M05 AMC1305M25 ec_eodrift_bas654.gif
(3) Gain error drift is calculated using the box method as described by the following equation: AMC1305L25 AMC1305M05 AMC1305M25 ec_egdrift_bas654.gif
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