2 Single-Event Effects (SEE)

The primary SEE events of interest in the INA901-SP for this report are single-event latch-up (SEL). From a risk and impact point-of-view, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. In mixed technologies such as the LBC-SOI process used for the INA901-SP, the CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The INA901-SP exhibited no SEL with heavy ions up to an LET_EFF of 93.98MeV-cm² / mg at a fluence of 10⁷ ions / cm² and a chip temperature of 125°C.