SBOK068 November   2022 OPA4H199-SEP

 

  1.   OPA4H199-SEP Production Flow and Reliability Report
  2. 1Trademarks
  3. 2Texas Instruments Enhanced Product Qualification and Reliability Report
  4. 3Device Introduction
  5. 4OPA4H199-SEP Space Enhanced Plastic Production Flow
  6. 5Device Qualification
  7. 6Outgas Test Report

Device Qualification

The following is the device qualification summary.

Qualification by Similarity (Qualification Family)

A new device can be qualified either by performing full scale quality and reliability tests on the actual device or using previously qualified device(s) through "Qualification by Similarity" (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests will be eliminated, allowing for timely production release. When adopting QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration.

The QBS rules for a technology, product, test parameters or package shall define which attributes are required to remain fixed in order for the QBS rules to apply. The attributes which are expected and allowed to vary will be reviewed and a QBS plan shall be developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device shall be reviewed for conformance to the QBS rule sets applicable to that device. See JEDEC JESD47 for more information.

Table 5-1 Device Baseline
TI Device: OPA4H199MDYYTSEP Assembly Site: TI PHI (Philippines)
DLA VID: V62/21615-02XE Test Site: TI PHI (Philippines)
Wafer Fab: TI RFAB (USA) Pin/Package Type: 14 / SOT-23-THN(DYY)
Fab Process: LBC9 Leadframe: Cu
Fab Technology: Power BiCMOS Termination Finish: NiPdAu
Die Revision: AA Mount Compound: Furukuwa AFN603-K13-50
Die Name: G2OPA4991AAP Bond Wire: 20.3 µm Au
ESD CDM: ±1000V Mold Compound: Sumitomo EME-G700L TD
ESD HBM: ±2000V Moisture Sensitivity: MSL 1 / 260°C
(1) Baseline information in effect as of the date of this report
Table 5-2 Space Enhanced Products New Device Qualification Matrix
Note that qualification by similarity (“qualification family”) per JEDEC JESD47 is allowed.
Description Condition Sample Size Used/Rejects Lots Required Test Method
Electromigration Maximum Recommended Operating Conditions N/A N/A Per TI Design Rules
Wire Bond Life Maximum Recommended Operating Conditions N/A N/A Per TI Design Rules
Electrical Characterization TI Data Sheet 10 3 N/A
Electrostatic Discharge Sensitivity HBM 3 units/voltage N/A EIA/JESD22-A114
CDM EIA/JESD22-C101
Latch-up Per Technology 3/0 1 EIA/JESD78
Physical Dimensions TI Data Sheet 5/0 1 EIA/JESD22- B100
Thermal Impedance Theta-JA on board Per Pin-Package N/A EIA/JESD51
Bias Life Test 125°C / 1000 hours or equivalent 45/0 3 JESD22-A108*
Biased HAST 130°C / 85% / 96 hours 77/0 3 JESD22-A110*
Extended Biased HAST 130°C / 85% / 250 hours (for reference) 77/0 1 JESD22-A110*
Unbiased HAST 130°C / 85% / 96 hours 77/0 3 JESD22-A.118*
Temperature Cycle -65°C to +150°C non-biased for 500 cycles 77/0 3 JESD22-A104*
Solder Heat 260°C for 10 seconds 22/0 1 JESD22-B106
Resistance to Solvents Ink symbol only 12/0 1 JESD22-B107
Solderability Condition A (steam age for 8 hours) 22/0 1 ANSI/J-STD-002-92
Flammability Method A / Method B 5/0 1 UL-1964
Bond Shear Per wire size 5 units x 30/0 bonds 3 JESD22-B116
Bond Pull Strength Per wire size 5 units x 30/0 bonds 3 ASTM F-459
Die Shear Per die size 5/0 3 TM 2019
High Temp Storage 150 °C / 1,000 hours 15/0 3 JESD22-A103-A*
Moisture Sensitivity Surface Mount Only 12 1 J-STD-020-A*
Radiation Response Characterization Total Ionization Dose 5 units/dose level 1 MIL-STD-883/Method 1019
Single-Event Latch-up
Outgassing Characterization TML (Total Mass Lost), CVCM (Collected Volatile Condensable material) 5 1 ASTM E595
*Precondition performed per JEDEC Std. 22, Method A112/A113.