This report covers the radiation characterization results of the SN54SC4T08-SEP AND gate. The study was done to determine Total Ionizing Dose (TID) effects under high dose rate (HDR) up to 50 krad(Si) as a one time characterization. The results show that all samples passed within the specified limits up to 50 krad(Si). However, Radiation Lot Acceptance Testing (RLAT) will be performed using 22 units at a dose level of 30 krad(Si) for future wafer lots. Furthermore, the SN54SC4T08-SEP is packaged in a space enhanced plastic for low outgassing characteristics and is Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg, which makes the device an option for low Earth orbit space applications. The device can be used to drive signals over relatively long traces or transmission lines.