SBOK078 October 2023 SN54SC4T08-SEP
PRODUCTION DATA
The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC4T08-SEP, a radiation-tolerant, four-channel two-input positive AND gate with logic-level shifter. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used for the SEE characterization. The SEE results demonstrated that the SN54SC4T08-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg and across the full electrical specifications. CREME96-based worst-week event-rate calculations for LEO (ISS) and GEO orbits for the DSEE are presented for reference.