Abstract

The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC4T08-SEP, a four-channel, two-input positive AND gate with logic-level shifter. Heavy-ions with an LET_EFF of 43 MeV-cm² / mg were used to irradiate three production devices with a fluence of 1 × 10⁷ ions / cm². The results demonstrate that the SN54SC4T08-SEP is SEL-free up to LET_EFF = 43 MeV-cm² / mg at 125°C.