SBOK079 October   2023 TPS7H2140-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. Depth, Range, and LETEFF Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14. 11References

Abstract

The purpose of this study is to characterize the single-event-effects (SEE) performance due to heavy-ion irradiation of the TPS7H2140-SEP. SEE performance was verified at minimum (4.5 V) and maximum (32 V) operating conditions. Heavy-ions at an LETEFF of 48 MeV × cm2 / mg were used to irradiate three production devices and four pre-production devices. Flux of ≈105 ions / cm2 × s and fluences of ≈ 107 ions / cm2 per run were used for the characterization. The results demonstrated that the TPS7H2140-SEP is SEL and SEB/SEGR-free up to 48 MeV × cm2 / mg, at T = 125°C and T = 25°C, respectively, and across the full electrical specifications. SET performance for output voltage excursions ≥ |3%| from the nominal voltage, excursions ≥ |4%| from nominal CS, and negative edge transients on the FAULT pin are discussed in Single-Event Transients (SET).