1 Introduction

The TPS7H2140-SEP is a space-enhanced-plastic, 4.5-V to 32-V input, 5.4-A (1.35-A per channel), quad-channel eFuse. The TPS7H2140-SEP is fully protected with four integrated 160-mΩ (typical) NMOS power FETs. Full diagnostics and high-accuracy current sense enables intelligent control of the loads. An external adjustable current limit improves the reliability of whole system by limiting the inrush overload current.

The device is offered in a 28-pin HTSSOP plastic package. Table 1-1 lists general device information and test conditions. For more detailed technical specifications, user guides, and application notes, see the TPS7H2140-SEP product page.

Table 1-1 Overview Information

Description⁽¹⁾	Device Information
TI part number	TPS7H2140-SEP
Orderable number	TPS7H2140MPWPTSEP
Device function	Quad-channel eFuse
Technology	LBC8
Exposure facility	Radiation effects facility, Cyclotron Institute, Texas A&M University (15 MeV / nucleon)
Heavy ion fluence per run	9.85 × 10⁶ – 1 × 10⁷ ions/cm²
Irradiation temperature	25°C (for SEB/SEGR testing & SET testing), and 125°C (for SEL testing)

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