SBOK079 October 2023 TPS7H2140-SEP
PRODUCTION DATA
- 1
- Abstract
- Trademarks
- 1 Introduction
- 2 Single-Event Effects (SEE)
- 3 Device and Test Board Information
- 4 Irradiation Facility and Setup
- 5 Depth, Range, and LETEFF Calculation
- 6 Test Setup and Procedures
- 7 Destructive Single-Event Effects (DSEE)
- 8 Single-Event Transients (SET)
- 9 Event Rate Calculations
- 10Summary
- 11References
5 Depth, Range, and LETEFF Calculation
Figure 5-1 Generalized Cross-Section of the LBC8 Technology BEOL Stack on the TPS7H2140-SEP [Left] and SEUSS 2020 Application Used to Determine Key Ion Parameters [Right]The TPS7H2140-SEP is fabricated in the TI Linear BiCMOS 250-nm process with a back-end-of-line (BEOL) stack consisting of five levels of standard thickness aluminum metal on a 0.6-μm pitch. The total stack height from the surface of the passivation to the silicon surface is 5.46 μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the 1-mil thick Aramica beam port window, the 40-mm air gap, and the BEOL stack over the TPS7H2140-SEP, the effective LET (LETEFF) at the surface of the silicon substrate, the depth, and the ion range was determined with the SEUSS 2020 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models). Table 5-1 lists the results.
| Ion Type | Angle of Incidence | Degrader Steps (Number) | Degrader Angle | Range in Silicon | LETEFF (MeV·cm2/ mg) |
|---|---|---|---|---|---|
| 109Ag | 0 | 0 | 0 | 99.2 | 48 |