SBOK084 December   2023 SN54SC3T97-SEP , SN54SC3T98-SEP , SN54SC4T00-SEP , SN54SC4T02-SEP , SN54SC4T125-SEP , SN54SC4T32-SEP , SN54SC4T86-SEP

PRODUCTION DATA  

  1.   1
  2.   SN54SC4T125-SEP Single-Event Latch-Up (SEL) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
  9. 6Summary
  10. 7References

Overview

SN54SC4T125-SEP contains four independent buffers with 3-state outputs and extended voltage operation to allow for level translation. Each buffer performs the Boolean function Y = A in positive logic. The outputs can be put into a Hi-Z state by applying a High on the OE pin. The output level is referenced to the supply voltage (VCC) and supports 1.8-V, 2.5-V, 3.3-V, and 5-V CMOS levels.

Table 1-1 Overview Information1
DescriptionDevice Information
TI Part Number SN54SC4T125-SEP
MLS NumberSN54SC4T125MPWTSEP
Device Function Radiation Tolerant, Single Power Supply Quadruple Buffer Translator Gate With 3-State Output CMOS Logic Level Shifter
TechnologyLBC9
Exposure Facility Facility for Rare Isotope Beams (FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility
Heavy Ion Fluence per Run1×107 ions / cm2
Irradiation Temperature 125°C (for SEL testing)
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