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SBOS583B December 2011 – December 2016

PRODUCTION DATA.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Voltage	Supply, VCC	–0.3	6	V
	Input, SET and HYST	–0.3	V_CC + 0.3
	Output, OT	–0.3	6
Current	Input		20	mA
Current	Output		20	mA
Temperature	Operating, T_A	–40	125	°C
	Junction, T_J		150
	Storatge, T_stg	–65	150

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±4000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000
		Machine model (MM)	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V_CC	Supply voltage	2.7		5.5	V
T_A	Operating temperature	0		125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TMP709	UNIT
		DBV (SOT-23)
		5 PINS
R_θJA	Junction-to-ambient thermal resistance	217.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	86.3	°C/W
R_θJB	Junction-to-board thermal resistance	44.6	°C/W
ψ_JT	Junction-to-top characterization parameter	4.4	°C/W
ψ_JB	Junction-to-board characterization parameter	43.8	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

at T_A = 0°C to 125°C and V_CC = 2.7 V to 5.5 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
POWER SUPPLY
I_CC	Supply current	V_CC = 5 V		40	55	µA
I_CC	Supply current	V_CC = 2.7 V		40	55	µA
TEMPERATURE
T_E	Temperature error	T_A = 60°C to 100°C		±0.5	±3	°C
DIGITAL INPUT (HYST)
V_IH	High-level input voltage		0.7 × V_CC			V
V_IL	Low-level input voltage				0.3 × V_CC	V
C_IN	Input capacitance			10		pF
ANALOG INPUT (SET)
V_IN	Input voltage range		0		V_CC	V
I_{lkg_in}	Input leakage current			1		µA
DIGITAL OPEN-DRAIN OUTPUT (OT)
I_{(OT_SINK)}	Output sink current	V_OT = 0.3 V	5	12		mA
I_lkg(OT)	Output leakage current	V_OT = V_CC		1		µA

6.6 Typical Characteristics

at T_A = 25°C and V_CC = 2.7 V to 5.5 V (unless otherwise noted)

Figure 1. Supply Current vs Temperature

Figure 3. Hysteresis vs Trip Temperature

Figure 2. R_SET vs Trip Temperature

Figure 4. Temperature Error vs Trip Temperature