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SBVS080J September 2006 – November 2016 TPS75100 , TPS75103 , TPS75105

PRODUCTION DATA.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
V_IN range	–0.3	7	V
V_ISET, V_ENA, V_ENB, V_DX range	–0.3	V_IN	V
I_DX for D1A, D2A, D1B, D2B	35		mA
D1A, D2A, D1B, D2B short-circuit duration	Indefinite
Continuous total power dissipation	Internally limited
Junction temperature, T_J	–55	150	°C
Storage temperature, T_stg	–55	150	°C

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

PARAMETER		MIN	MAX	UNIT
V_IN	Input voltage	2.7	5.5	V
I_DX	Operating current per LED	3	25	mA
t_PWM	On-time for PWM signal	33		µs
T_J	Operating junction temperature range	–40	85	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS7510x		UNIT
		YFF (DSBGA)	DSK (WSON)
		9 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	101.6	65.3	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	1.2	54.0	°C/W
R_θJB	Junction-to-board thermal resistance	17.6	39.5	°C/W
ψ_JT	Junction-to-top characterization parameter	0.6	1.6	°C/W
ψ_JB	Junction-to-board characterization parameter	17.8	39.7	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	23.6	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating junction temperature range (T_J = –40°C to +85°C), V_IN = 3.8 V, DxA and DxB = 3.3 V, R_SET = 32.4 kΩ, and ENA and ENB = 3.8 V (unless otherwise noted); typical values are at T_A = 25°C

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
I_SHDN	Shutdown supply current	V_ENA,B = 0 V, V_DX = 0 V				0.03	1	µA
I_GND	Ground current	DSK package	I_DX ≤ 5 mA, V_IN = 3.8 V			170	230	µA
		DSK package	I_DX > 5 mA, V_IN = 3.8 V			250	300
		YFF package	I_DX ≤ 5 mA, V_IN = 4.5 V			170	200
		YFF package	I_DX > 5 mA, V_IN = 4.5 V			250	300
ΔI_D	Current matching (I_DXMAX – I_DXMIN / I_DXMAX) × 100%	T_A = 25°C			0%	2%	4%
		T_A = –40°C to +85°C		YFF package	0%		5%
		T_A = –40°C to +85°C		DSK package	0%		6%
ΔI_DX%/ΔV_IN	Line regulation	3.5 V ≤ V_IN ≤ 4.5 V, I_DX = 5 mA				2.0		%/V
ΔI_DX%/ΔV_DX	Load regulation	1.8 V ≤ V_DX ≤ 3.5 V, I_DX = 5 mA				0.8		%/V
V_DO	Dropout voltage of any DX current source (V_DX at I_DX = 0.8 × I_{DX, nom})	I_DXnom = 5 mA				28	100	mV
V_DO		I_DXnom = 15 mA				70		mV
V_ISET	Reference voltage for current set				1.183	1.225	1.257	V
I_OPEN	Diode current accuracy⁽¹⁾	I_SET = open, V_DX = V_IN – 0.2 V		YFF package		0.5%	3%
I_OPEN	Diode current accuracy⁽¹⁾	I_SET = open, V_DX = V_IN – 0.2 V		DSK package		0.5%	4%
I_SET	I_SET pin current range				2.5		62.5	µA
k	I_SET to I_DX current ratio⁽¹⁾					420
V_IH	Enable high level input voltage				1.2			V
V_IL	Enable low level input voltage						0.4	V
I_INA	Enable pin A (V_ENA) input current	V_ENA = 3.8 V				5.0	6.1	µA
I_INA	Enable pin A (V_ENA) input current	V_ENA = 1.8 V				2.2		µA
I_INB	Enable pin B (V_ENB) input current	V_ENB = 3.8 V				4.0	4.9	µA
I_INB	Enable pin B (V_ENB) input current	V_ENB = 1.8 V				1.8		µA
t_SD	Shutdown delay time	Delay from ENA and ENB = low to reach shutdown current (I_DX = 0.1 × I_{DX, nom})			5	13	30	µs
T_SD	Thermal shutdown temperature	Shutdown, temperature increasing				165		°C
T_SD	Thermal shutdown temperature	Reset, temperature decreasing				140		°C

(1) Average of all four I_DX outputs.

6.6 Typical Characteristics

over operating junction temperature range (T_J = –40°C to +85°C), V_IN = 3.8 V, DxA and DxB = 3.3 V, R_SET = 32.4 kΩ, and ENA and ENB = high (unless otherwise noted); typical values are at T_A = 25°C