SCDS418D July   2020  – September 2021

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Thermal Information
    4. 7.4  Recommended Operating Conditions
    5. 7.5  Source or Drain Continuous Current
    6. 7.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 7.7  ±15 V Dual Supply: Switching Characteristics 
    8. 7.8  ±20 V Dual Supply: Electrical Characteristics
    9. 7.9  ±20 V Dual Supply: Switching Characteristics
    10. 7.10 44 V Single Supply: Electrical Characteristics 
    11. 7.11 44 V Single Supply: Switching Characteristics 
    12. 7.12 12 V Single Supply: Electrical Characteristics 
    13. 7.13 12 V Single Supply: Switching Characteristics 
    14. 7.14 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Off-Leakage Current
    3. 8.3  On-Leakage Current
    4. 8.4  Transition Time
    5. 8.5  tON(EN) and tOFF(EN)
    6. 8.6  Break-Before-Make
    7. 8.7  tON (VDD) Time
    8. 8.8  Propagation Delay
    9. 8.9  Charge Injection
    10. 8.10 Off Isolation
    11. 8.11 Crosstalk
    12. 8.12 Bandwidth
    13. 8.13 THD + Noise
    14. 8.14 Power Supply Rejection Ratio (PSRR)
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Rail-to-Rail Operation
      3. 9.3.3 1.8 V Logic Compatible Inputs
      4. 9.3.4 Integrated Pull-Down Resistor on Logic Pins
      5. 9.3.5 Fail-Safe Logic
      6. 9.3.6 Latch-Up Immune
      7. 9.3.7 Ultra-Low Charge Injection
    4. 9.4 Device Functional Modes
    5. 9.5 Truth Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

10.2.3 Application Curve

The low on and off leakage currents of TMUX7208 and ultra-low charge injection performance make this device ideal for implementing high precision industrial systems. The TMUX7208 contains specialized architecture to reduce charge injection on the drain side (D) (see Section 9.3.7 for more details). Figure 10-3 shows the plot for the charge injection versus source voltage for the TMUX7208.

TA = 25°C
Figure 10-3 Charge Injection vs Drain Voltage
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