Abstract

This report covers the Radiation Lot Acceptance Testing (RLAT) results of the SN54SC4T00-SEP radiation tolerant, quadruple 2-input positive NAND gates with integrated translation.

The study was done to determine Total Ionizing Dose (TID) effects under high dose rate (HDR) to 30 krad(Si). Radiation Lot Acceptance Testing (RLAT) was performed using five units at a dose level of 30 krad(Si) per MIL-STD-883 TM 1019, and all future wafer lots will be tested to the same conditions.

The SN54SC4T00-SEP is packaged in a space enhanced plastic for low outgassing characteristics and is Single Event Latch-Up (SEL) immune up to 43 MeV-cm²/mg, which makes the device an option for low Earth orbit space applications.

For full total ionizing dose characterization results, see SN54SC4T125-SEP Total Ionizing Dose (TID) Report.