SFFS012 February 2024 LM7480-Q1
4 Pin Failure Mode Analysis (Pin FMA)
This section provides a Failure Mode Analysis (FMA) for the pins of the LM7480-Q1. The failure modes covered in this document include the typical pin-by-pin failure scenarios:
- Pin short-circuited to Ground (see Table 4-2)
- Pin open-circuited (see Table 4-3)
- Pin short-circuited to an adjacent pin (see Table 4-4)
- Pin short-circuited to supply (see Table 4-5)
Table 4-2 through Table 4-5 also indicate how these pin conditions can affect the device as per the failure effects classification in Table 4-1.
| Class | Failure Effects |
|---|---|
| A | Potential device damage that affects functionality |
| B | No device damage, but loss of functionality |
| C | No device damage, but performance degradation |
| D | No device damage, no impact to functionality or performance |
Figure 4-1 shows the LM7480-Q1 pin diagram. For a detailed description of the device pins please refer to the Pin Configuration and Functions section in the LM7480-Q1 data sheet.
Figure 4-1 Pin DiagramThe pin FMA is provided under the assumption that the device is operating under the specified ranges within the Recommended Operating Conditions section of the data sheet.
| Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
|---|---|---|---|
|
DGATE |
1 |
Device will damage due to internal conduction. External DGATE FET can also damage due to maximum VGS rating violation. |
A |
|
A |
2 |
Input supply shorted to ground. Device will not be functional. |
B |
|
VSNS |
3 |
Input supply monitoring feature will not be available. |
B |
|
SW |
4 | No device damage is expected if VSNS is floating. Device will get damaged if VSNS connected to A. |
A |
|
OV |
5 |
Overvoltage protection functionality will be disabled. |
B |
|
EN/UVLO |
6 |
Device will be in shutdown mode. |
B |
|
GND |
7 |
No impact on the device functionality. |
D |
|
HGATE |
8 |
HGATE gate drive will be off. |
B |
|
OUT |
9 |
No device damage is expected. External FET VGS(max) rating can exceed and damage external FET. |
D |
|
VS |
10 |
Device will not power up. |
B |
|
CAP |
11 |
Device will damage due to internal conduction between VS and CAP. |
A |
|
C |
12 |
Linear regulation and reverse current blocking functionality will not be available. Device quiescent current can increase. |
B |
| Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
|---|---|---|---|
|
DGATE |
1 |
External FET will be off as DGATE drive is open. |
B |
|
A |
2 |
DGATE drive will be off. |
B |
|
VSNS |
3 |
Input supply monitoring feature will not be available. |
B |
|
SW |
4 |
Input supply monitoring feature will not be available. |
B |
|
OV |
5 |
Overvoltage functionality is not controlled, it can turn HGATE ON/OFF. |
B |
|
EN/UVLO |
6 |
Device will be in shutdown mode due to internal pull-down on EN/UVLO pin. |
B |
|
GND |
7 |
Device will not power up. |
B |
|
HGATE |
8 |
HGATE FET will be off as HGATE gate drive is open. |
B |
|
OUT |
9 |
HGATE FET will not be able to turn off as OUT is floating. |
B |
|
VS |
10 |
Device will not power up. |
B |
|
CAP |
11 |
DGATE and HGATE may turn on and off as part can enter CP UVLO cycle due to insufficient decoupling cap. |
B |
|
C |
12 |
DGATE drive will be off in case of LM74800-Q1. DGATE drive will remain on in case of LM74801-Q1. |
B |
| Pin Name | Pin No. |
Shorted to |
Description of Potential Failure Effect(s) | Failure Effect Class |
|---|---|---|---|---|
|
DGATE |
1 |
A |
DGATE FET is always off as external FET GATE to SOURCE is shorted. |
B |
|
A |
2 |
VSNS |
No impact on device functionality. |
D |
|
VSNS |
3 |
SW |
Input supply monitoring feature will always be available. |
B |
|
SW |
4 |
OV |
HGATE will turn off provided SW pin voltage is higher than overvoltage comparator threshold. |
B |
|
OV |
5 |
EN/UVLO |
HGATE will be on/off based on EN/UVLO voltage level being lower/higher than overvoltage comparator threshold. |
B |
|
EN/UVLO |
6 |
— |
No impact on device operation. |
D |
|
GND |
7 |
HGATE |
HGATE will be pulled low and external FET will be off. |
B |
|
HGATE |
8 |
OUT |
HGATE FET will be off as FET GATE to SOURCE is shorted. |
B |
|
OUT |
9 |
VS |
HGATE FET gets bypassed. Overvoltage protection and load disconnect functionality will not be available. |
B |
|
VS |
10 |
CAP |
Charge pump will not power up. DGATE and HGATE drive will remain off. |
B |
|
CAP |
11 |
C |
Charge pump will not come up. DGATE and HGATE drives will be off. |
B |
|
C |
12 |
— |
No impact on device operation. |
D |
| Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
|---|---|---|---|
|
DGATE |
1 |
DGATE FET is always off as external FET GATE to SOURCE is shorted. |
B |
|
A |
2 |
No impact on device operation. |
D |
|
VSNS |
3 |
No impact on device operation. |
D |
|
SW |
4 |
Input supply monitoring feature will always be available. |
B |
|
OV |
5 |
HGATE will be off due to overvoltage comparator input higher than overvoltage threshold. |
B |
|
EN/UVLO |
6 |
Device will be always on. Undervoltage functionality will not be available. |
B |
|
GND |
7 |
Input supply shorted to ground. Device will not power up. |
B |
|
HGATE |
8 |
HGATE gate drive will be off and device quiescent current can increase. |
B |
|
OUT |
9 |
Input is shorted to output. Device functionality will not be available. |
B |
|
VS |
10 |
DGATE FET is shorted. Reverse polarity and reverse current blocking feature is not available. |
B |
|
CAP |
11 |
Charge pump will not power up. DGATE and HGATE drive will remain off. |
B |
|
C |
12 |
Linear regulation and reverse current blocking functionality will not be available. |
B |