SFFS285 January   2024 LM74701-Q1

 

  1.   1
  2.   Trademarks
  3. 1Overview
  4. 2Functional Safety Failure In Time (FIT) Rates
  5. 3Failure Mode Distribution (FMD)
  6. 4Pin Failure Mode Analysis (Pin FMA)

Pin Failure Mode Analysis (Pin FMA)

This section provides a Failure Mode Analysis (FMA) for the pins of the LM74701-Q1. The failure modes covered in this document include the typical pin-by-pin failure scenarios:

  • Pin short-circuited to Ground (see Table 4-2)
  • Pin open-circuited (see Table 4-3)
  • Pin short-circuited to an adjacent pin (see Table 4-4)
  • Pin short-circuited to supply (see Table 4-5)

Table 4-2 through Table 4-5 also indicate how these pin conditions can affect the device as per the failure effects classification in Table 4-1.

Table 4-1 TI Classification of Failure Effects
Class Failure Effects
A Potential device damage that affects functionality
B No device damage, but loss of functionality
C No device damage, but performance degradation
D No device damage, no impact to functionality or performance

Figure 4-1 shows the LM74701-Q1 pin diagram. For a detailed description of the device pins please refer to the Pin Configuration and Functions section in the LM74701-Q1 data sheet.

GUID-20210608-CA0I-M9CS-XTBD-QKSFKLTDJF1G-low.gif Figure 4-1 LM74701-Q1 Pin Diagram
The pin FMA is provided under the assumption that the device is operating under the specified ranges within the Recommended Operating Conditions section of the data sheet.

Table 4-2 Pin FMA for Device Pins Short-Circuited to Ground
Pin Name Pin No. Description of Potential Failure Effect(s) Failure Effect Class

GATE

1

Device can get damaged due to internal conduction path from ANODE to GATE.

A

ANODE

2

Device will not power up. Equivalent to input supply shorted to GND.

B

VCAP

3

Device can get damaged due to internal conduction path from ANODE to VCAP.

A

SW

4

Device can get damaged due to internal switch conduction when EN pin is high.

A

GND

5

No effect on the device behavior.

D

EN

6

Device will be in shutdown mode. External MOSFET will not turn on.

B

N.C

7

No effect on the device behavior.

D

CATHODE

8

VDS clamp feature will not be functional.

B

Table 4-3 Pin FMA for Device Pins Open-Circuited
Pin Name Pin No. Description of Potential Failure Effect(s) Failure Effect Class

GATE

1

External FET will not turn on.

B

ANODE

2

Device will not power up.

B

VCAP

3

Charge pump voltage will not be available. External FET will not turn on.

B

SW

4

No effect on the device behavior.

D

GND

5

Device may not power up.

B

EN

6

Device will be in shutdown mode due to internal pull down on EN pin.

B

N.C

7

No effect on the device behavior.

D

CATHODE

8

VDS clamp feature and reverse current blocking feature will not be functional.

B

Table 4-4 Pin FMA for Device Pins Short-Circuited to Adjacent Pin
Pin Name Pin No. Shorted to Description of Potential Failure Effect(s) Failure Effect Class

GATE

1

ANODE

External FET will not turn on. Device quiescent current may increase.

B

ANODE

2

VCAP

External FET will not turn on. Device quiescent current may increase.

B

VCAP

3

SW

External FET may not turn on due to VCAP loading, when external resistor divider connected from SW pin to GND.

B

SW

4

SW is the corner pin. No effect on the device performance.

D

GND

5

EN

Device will be in shutdown mode.

B

EN

6

N.C

No effect on the device performance.

D

N.C

7

CATHODE

No effect on the device performance.

D

CATHODE

8

Corner pin. No effect on the device performance.

D

Table 4-5 Pin FMA for Device Pins Short-Circuited to Supply
Pin Name Pin No. Description of Potential Failure Effect(s) Failure Effect Class

GATE

1

External FET will not turn on.

B

ANODE

2

No effect on the device performance.

D

VCAP

3

Charge pump voltage will not be available. External FET will not turn on.

B

SW

4

Battery voltage monitoring will be always available, irrespective of EN pin status.

B

GND

5

Device will not power up as supply is shorted to GND.

B

EN

6

Device will be in always on mode.

B

N.C

7

No effect on the device performance.

D

CATHODE

8

External FET is bypassed. Reverse current blocking and VDS clamp feature will not be functional.

B