SFFS594A December 2023 – November 2024 TPSI3100 , TPSI3100-Q1
This section provides a failure mode analysis (FMA) for the pins of the TPSI310x-Q1, TPSI311x-Q1, TPSI312x-Q1, and TPSI3133-Q1 family and the TPSI310x, TPSI311x, TPSI312x, and TPSI3133 family. The failure modes covered in this document include the typical pin-by-pin failure scenarios:
Table 4-2 through Table 4-5 also indicate how these pin conditions can affect the device as per the failure effects classification in Table 4-2.
Class | Failure Effects |
---|---|
A | Potential device damage that affects functionality. |
B | No device damage, but loss of functionality. |
C | No device damage, but performance degradation. |
D | No device damage, no impact to functionality or performance. |
Figure 4-1 shows the TPSI310x-Q1 and TPSI310x pin diagram. For a detailed description of the device pins please refer to the Pin Configuration and Functions section in the data sheets.
Following are the assumptions of use and the device configuration assumed for the pin FMA in this section:
Pin Name | Pin No. | Ground | Description of Potential Failure Effects | Failure Effect Class |
---|---|---|---|---|
EN | 1 | VSSP | VDRV asserted low. | B |
CE | 2 | VSSP | Device in standby. No power transfer. VDDH and VDDM rail discharge. VDRV asserted low with active clamp enabled. | B |
VDDP | 4 | VSSP | No power transfer. VDDH and VDDM rail collapse. VDRV asserted low with active clamp enabled. | B |
PGOOD | 5 | VSSP | PGOOD asserted low. If PGOOD not used, tie to VSSP. | B |
FLT1 | 6 | VSSP | FLT1 asserted low. If FLT1 not used, tie to VSSP. | B |
ALM1 | 7 | VSSP | ALM1 asserted low. If ALM1 not used, tie to VSSP. | B |
RESP | 10 | VSSS | Comparator deglitch is set to minimum value which can be less than the application requirements. | C |
ALM1_CMP | 11 | VSSS | ALM1 open-drain output is high-impedance. If ALM1_CMP not used, tie to VSSS. | B |
FLT1_CMP | 12 | VSSS | FLT1 open-drain output is high-impedance. If FLT1_CMP not used, tie to VSSS. | B |
VDDM | 13 | VSSS | VDDH and VDDM rail collapse. VDRV asserted low with active clamp enabled. | B |
VDDH | 15 | VSSS | VDDH and VDDM rail collapse. VDRV asserted low with active clamp enabled. | B |
VDRV | 16 | VSSS | If VDRV is high, VDDH and VDDM rail collapse. VDRV asserts low with active clamp enabled. If VDRV is low, no effect. | B |
Pin Name | Pin No. | Description of Potential Failure Effects | Failure Effect Class |
---|---|---|---|
EN | 1 | VDRV asserted low. EN pin has an internal resistive pulldown to VSSP. | B |
CE | 2 | Device powers off. VDDH and VDDM rails discharge. VDRV asserted low. CE pin has an internal resistive pulldown to VSSP. | B |
VSSP | 3 | Device has additional ground path through pin 8 (VSSP). | C |
VDDP | 4 | No power transfer. VDDH and VDDM rail collapse. VDRV asserted low with active clamp enabled. | B |
PGOOD | 5 | If PGOOD unused, no effect. If PGOOD used, PGOOD asserted high is indicated to the system regardless of actual status. | B |
FLT1 | 6 | If FLT1 unused, no effect. If FLT1 used, and pullup resistor still connected to system, FLT1 asserted high is indicated to the system regardless of actual status of FLT1_CMP comparator output. | B |
ALM1 | 7 | If ALM1 unused, no effect. If ALM1 used, and pullup resistor still connected to system, ALM1 asserted high is indicated to the system regardless of actual status of ALM1_CMP comparator output. | B |
VSSP | 8 | Device has additional ground path through pin 3 (VSSP). | C |
VSSS | 9 | Device has ground path through pin 14 (VSSS). Normal power transfer. VDDH and VDDM rails remain charged. VDRV follows state of EN logic level. | C |
RESP | 10 | Comparator deglitch is set to maximum value which can be more than the application requirements. | B |
ALM1_CMP | 11 | ALM1_CMP pin has a weak internal resistive pulldown to VSSS and can be susceptible to switching noise causing false alarm indications. If ALM1_CMP not used, tie to VSSS | B |
FLT1_CMP | 12 | FLT1_CMP pin has a weak internal resistive pulldown to VSSS and can be susceptible to switching noise causing false alarm indications. If FLT1_CMP not used, tie to VSSS | B |
VDDM | 13 | VDDH and VDDM can collapse under loading or switching events. | B |
VSSS | 14 | Device has ground path through pin 9 (VSSS). Normal power transfer. VDDH and VDDM rails remain charged. VDRV follows state of EN logic level. | C |
VDDH | 15 | VDDH can collapse under loading or switching events. | B |
VDRV | 16 | No drive to external switch. External switch gate control can float dependent upon application circuitry. | B |
Pin Name | Pin No. | Shorted to | Description of Potential Failure Effects | Failure Effect Class |
---|---|---|---|---|
VDRV | 16 | VDDH | If VDRV was low, VDDH and VDDM rail collapse. VDRV remains low with active clamp enabled. If VDRV was high, no effect. | B |
FLT1_CMP | 12 | VDDM | If strength of signal driving FLT1_CMP is high, VDDM and VDDH rails can collapse, and VDRV is asserted low. Power transfer continues, although at a much lower amount. If strength of signal driving FLT1_CMP is weak, FLT1_CMP comparator threshold can be reached causing VDRV to be asserted low. | B |
FLT1_CMP | 12 | ALM1_CMP | FLT1_CMP comparator threshold can be reached causing VDRV to be asserted low, along with FLT1 asserting low. Similarly, if ALM1_CMP threshold is reached, ALM1 asserts low. | B |
ALM1_CMP | 11 | RESP | Depending on strength of signal driving ALM1_CMP, ALM1_CMP threshold cannot be reached, and no ALM1 events occur. Deglitch of comparators can increase or decrease depending on strength of signal driving ALM1_CMP. | B |
EN | 1 | CE | EN can be tied to CE in the application if desired. | D |
PGOOD | 5 | FLT1 | Electrical ORing of PGOOD and FLT1open-drain outputs. All status indicators can be tied in the application if desired. | D |
FLT1 | 6 | ALM1 | Electrical ORing of FLT1 and ALM1open-drain outputs. All status indicators can be tied in the application if desired. | D |
Pin Name | Pin No. | Description of Potential Failure Effects | Failure Effect Class |
---|---|---|---|
EN | 1 | EN can be tied to VDDP in the application if desired. | D |
CE | 2 | CE can be tied to VDDP in the application if desired. Device powers up depending on voltage level of VDDP. | D |
PGOOD | 5 | Potential high current from VDDP while PGOOD is asserted low. Device can thermal cycle or can be damaged. | A |
FLT1 | 6 | Potential high current from VDDP while FLT1 is asserted low. Device can thermal cycle or can be damaged. | A |
ALM1 | 7 | Potential high current from VDDP while ALM1 is asserted low. Device can thermal cycle or can be damaged. | A |