SFFSA14 October 2024 TPSI31P1-Q1
This section provides a failure mode analysis (FMA) for the pins of the TPSI31P1-Q1 device. The failure modes covered in this document include the typical pin-by-pin failure scenarios:
Table 4-2 through Table 4-5 also indicate how these pin conditions can affect the device as per the failure effects classification in Table 4-2.
Class | Failure Effects |
---|---|
A | Potential device damage that affects functionality. |
B | No device damage, but loss of functionality. |
C | No device damage, but performance degradation. |
D | No device damage, no impact to functionality or performance. |
Figure 4-1 shows the TPSI31P1-Q1 pin diagram. For a detailed description of the device pins please refer to the Pin Configuration and Functions section in the data sheet.
Following are the assumptions of use and the device configuration assumed for the pin FMA in this section:
Pin Name | Pin No. | Ground | Description of Potential Failure Effects | Failure Effect Class |
---|---|---|---|---|
EN | 1 | VSSP | VDRV asserted low. | B |
CE | 2 | VSSP | Device in standby. No power transfer. VDDH and VDDM rails discharge. VDRV is asserted low with keep-off circuitry enabled. | B |
VDDP | 4 | VSSP | No power transfer. VDDH and VDDM rails collapse. VDRV is asserted low with keep-off circuitry enabled. | B |
PGOOD | 5 | VSSP | PGOOD is asserted low. If PGOOD is not used, tie to VSSP. | B |
NC | 6 | VSSP | No effect. | D |
NC | 7 | VSSP | No effect. | D |
IS+ | 11 | VSSS | If CE = H and EN = H, VDRV is asserted high. | B |
IS+ | 12 | VSSS | If CE = H and EN = H, VDRV is asserted high. | B |
VDDM | 13 | VSSS | VDDH and VDDM rails collapse. VDRV is asserted low with keep-off circuitry enabled. | B |
VDDH | 15 | VSSS | VDDH and VDDM rails collapse. VDRV is asserted low with keep-off circuitry enabled. | B |
VDRV | 16 | VSSS | If VDRV was high, VDDH and VDDM rails collapse. VDRV asserts low with keep-off circuitry enabled. If VDRV was low, no effect. | B |
Pin Name | Pin No. | Description of Potential Failure Effects | Failure Effect Class |
---|---|---|---|
EN | 1 | VDRV asserted low. EN pin has an internal resistive pull-down to VSSP. | B |
CE | 2 | Device powers off. VDDH and VDDM rails discharge. VDRV is asserted low with keep-off circuitry enabled. CE pin has an internal resistive pull-down to VSSP. | B |
VSSP | 3 | Device has additional ground path through pin 8 (VSSP). | C |
VDDP | 4 | No power transfer. VDDH and VDDM rails collapse. VDRV asserted low with active clamp enabled. | B |
PGOOD | 5 | If PGOOD is unused, no effect. If PGOOD is used, and an external pull-up resistor is present, PGOOD asserted high is indicated to the system, regardless of actual status. | B |
NC | 6 | No effect. | B |
NC | 7 | No effect. | B |
VSSP | 8 | Device has additional ground path through pin 3 (VSSP). | C |
VSSS | 9 | Device has ground path through pin 14 (VSSS). Normal power transfer. VDDH and VDDM rails remain charged. VDRV follows state of EN logic level. | C |
VSSS | 10 | Device has ground path through pins 9 and 14 (VSSS). Normal power transfer. VDDH and VDDM rails remain charged. VDRV follows state of EN logic level. | B |
IS+ | 11 | IS+ pin has a weak internal resistive pull-down to VSSS and can be susceptible to switching noise. VDRV asserts high. | B |
IS+ | 12 | IS+ pin has a weak internal resistive pull-down to VSSS and can be susceptible to switching noise. VDRV asserts high. | B |
VDDM | 13 | VDDH and VDDM can collapse under loading or switching events. | B |
VSSS | 14 | Device has ground path through pin 9 (VSSS). Normal power transfer. VDDH and VDDM rails remain charged. VDRV follows state of EN logic level. | C |
VDDH | 15 | VDDH can collapse under loading or switching events. | B |
VDRV | 16 | No drive to external switch. External switch gate control can float depending upon application circuitry. | B |
Pin Name | Pin No. | Shorted to | Description of Potential Failure Effects | Failure Effect Class |
---|---|---|---|---|
VDRV | 16 | VDDH | If VDRV was low, VDDH and VDDM rails collapse. VDRV remains low with active clamp enabled. If VDRV was high, no effect. | B |
IS+ | 12 | VDDM | IS+ comparator threshold can be reached causing VDRV to be asserted low. | B |
IS+ | 12 | IS+ | Normal operation. | D |
EN | 1 | CE | EN can be tied to CE in the application, if desired. | D |
PGOOD | 5 | NC | NC output pin can drive low causing an electrical ORing of PGOOD with an open-drain output. PGOOD can be asserted low. | B |
NC | 6 | NC | No effect. | D |
Pin Name | Pin No. | Description of Potential Failure Effects | Failure Effect Class |
---|---|---|---|
EN | 1 | EN can be tied to VDDP in the application, if desired. | D |
CE | 2 | CE can be tied to VDDP in the application, if desired. Device powers up depending on voltage level of VDDP. | D |
PGOOD | 5 | Potential high current from VDDP while PGOOD is asserted low. Device can thermal cycle or be damaged. | A |
NC | 6 | Potential high current from VDDP while NC open drain is asserted low. Device can thermal cycle or be damaged. | A |
NC | 7 | Potential high current from VDDP while NC open drain is asserted low. Device can thermal cycle or be damaged. | A |