SLAU846A June 2023 – October 2023 MSPM0G1105 , MSPM0G1106 , MSPM0G1107 , MSPM0G1505 , MSPM0G1506 , MSPM0G1507 , MSPM0G3105 , MSPM0G3105-Q1 , MSPM0G3106 , MSPM0G3106-Q1 , MSPM0G3107 , MSPM0G3107-Q1 , MSPM0G3505 , MSPM0G3505-Q1 , MSPM0G3506 , MSPM0G3506-Q1 , MSPM0G3507 , MSPM0G3507-Q1
The program command is used to write (program) the flash memory. Specifically, the purpose of a PROGRAM operation is to configure the flash bits in one or more flash words from the non-deterministic erased state to the deterministic programmed state. Once a byte is programmed using the PROGRAM command, the byte can not be re-programmed unless the sector is erased using the ERASE command.
All devices support single flash word programming of 64 data bits (plus 8 ECC bits on devices with ECC) at a time, with control to limit the scope of a program operation to specific bytes within a 64-bit flash word.
Some devices additionally have support for a multi-word programming mode where 2, 4, or 8 flash words can be written with a single commanded operation. Multi-word programming, when available, significantly speeds up programming when multiple words need to be programmed (for example, during production programming or firmware updates). See the device-specific data sheet to determine if multi-word programming is supported, and if so, how many flash word buffers are provided.