Key features of the nonvolatile memory system include:
- In-circuit program and erase supported across the entire supply voltage range
- Internal programming voltage generation
- 64-bit flash word size (72-bit when
optional ECC is present)
- Static write protection (latched at boot and held until BOR or POR)
- Dynamic write protection (configurable at runtime)
- Sector (1KB) and bank (up to 256KB) erase
- Automatic hardware preverification to extend flash bank longevity
- Automatic hardware post-verification of program/erase
- Optional ECC protection (SECDED)
- Optional bank address swap mode (for seamless dual-image firmware updates)
- Optional program register cache for time efficient programming (2, 4, or 8 flash words)
Note: To determine if a device has any of the optional features described above, review the nonvolatile memory system detailed description in the corresponding device data sheet.