SLLSER8J June   2017  – August 2024

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Function
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications for D Package
    7. 6.7  Insulation Specifications for DWV Package
    8. 6.8  Safety-Related Certifications For D Package
    9. 6.9  Safety-Related Certifications For DWV Package
    10. 6.10 Safety Limiting Values
    11. 6.11 Electrical Characteristics
    12. 6.12 Switching Characteristics
    13. 6.13 Insulation Characteristics Curves
    14. 6.14 Typical Characteristics
  8. Parameter Measurement Information
    1. 7.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 7.1.1 CMTI Testing
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Supply
      2. 8.3.2 Input Stage
      3. 8.3.3 Output Stage
      4. 8.3.4 Protection Features
        1. 8.3.4.1 Undervoltage Lockout (UVLO)
        2. 8.3.4.2 Active Pulldown
        3. 8.3.4.3 Short-Circuit Clamping
        4. 8.3.4.4 Active Miller Clamp (UCC53x0M)
    4. 8.4 Device Functional Modes
      1. 8.4.1 ESD Structure
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing IN+ and IN– Input Filter
        2. 9.2.2.2 Gate-Driver Output Resistor
        3. 9.2.2.3 Estimate Gate-Driver Power Loss
        4. 9.2.2.4 Estimating Junction Temperature
      3. 9.2.3 Selecting VCC1 and VCC2 Capacitors
        1. 9.2.3.1 Selecting a VCC1 Capacitor
        2. 9.2.3.2 Selecting a VCC2 Capacitor
        3. 9.2.3.3 Application Circuits with Output Stage Negative Bias
      4. 9.2.4 Application Curve
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 PCB Material
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Certifications
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Support Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

Power Supply

The VCC1 input power supply supports a wide voltage range from 3 V to 15 V and the VCC2 output supply supports a voltage range from 9.5 V to 33 V. For operation with bipolar supplies, the power device is turned off with a negative voltage on the gate with respect to the emitter or source. This configuration prevents the power device from unintentionally turning on because of current induced from the Miller effect. The typical values of the VCC2 and VEE2 output supplies for bipolar operation are 15 V and –8 V with respect to GND2 for IGBTs and 20 V and –5 V for SiC MOSFETs.

For operation with unipolar supply, the VCC2 supply is connected to 15 V with respect to VEE2 for IGBTs, and 20 V for SiC MOSFETs. The VEE2 supply is connected to 0 V. In this use case, the UCC53x0 device with Miller clamping function (UCC53x0M) can be used . The Miller clamping function is implemented by adding a low impedance path between the gate of the power device and the VEE2 supply. Miller current sinks through the clamp pin, which clamps the gate voltage to be lower than the turn-on threshold value for the gate.