SLPS597D April   2017  – June 2024

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Absolute Maximum Ratings
    2. 4.2 Recommended Operating Conditions
    3. 4.3 Power Block Performance
    4. 4.4 Thermal Information
    5. 4.5 Electrical Characteristics
    6. 4.6 Typical Power Block Device Characteristics
    7. 4.7 Typical Power Block MOSFET Characteristics
  6. 5Application and Implementation
    1. 5.1 Application Information
    2. 5.2 Brushless DC Motor With Trapezoidal Control
    3. 5.3 Power Loss Curves
    4. 5.4 Safe Operating Area (SOA) Curve
    5. 5.5 Normalized Power Loss Curves
    6. 5.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 5.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
    8. 5.8 Layout
      1. 5.8.1 Layout Guidelines
        1. 5.8.1.1 Electrical Performance
        2. 5.8.1.2 Thermal Considerations
      2. 5.8.2 Layout Example
  7. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Support Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  8. 7Revision History
  9. 8Mechanical, Packaging, and Orderable Information

4.1 Absolute Maximum Ratings

TJ = 25°C (unless otherwise noted)(1)
PARAMETERCONDITIONSMINMAXUNIT
VoltageVIN to PGND–0.860V
VSW to PGND–0.360
GH to SH–2020
GL to PGND–2020
Pulsed current rating, IDM(2)400A
Power dissipation, PD12W
Avalanche energy, EASHigh-side FET, ID = 95A, L = 0.1mH448mJ
Low-side FET, ID = 95A, L = 0.1mH448
Operating junction temperature, TJ–55150°C
Storage temperature, Tstg–55150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Single FET conduction, max RθJC = 1.1°C/W, pulse duration ≤ 100μs, single pulse.
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