SLUSCO1B June   2017  – July 2024 UCC27212

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 Undervoltage Lockout (UVLO)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
      1. 9.2.1 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

VDD = VHB =12 V, VHS = VSS = 0 V, No load on LO or HO, TA = TJ = –40°C to +150°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IDD VDD quiescent current VLI = VHI = 0 V 0.11 0.19 mA
IDDO VDD operating current f = 500 kHz, CLOAD = 0 1.4 3 mA
IHB Boot voltage quiescent current VLI = VHI = 0 V 0.065 0.12 mA
IHBO Boot voltage operating current f = 500 kHz, CLOAD = 0 1.3 3 mA
IHBS HB to VSS quiescent current VHS = VHB = 100 V 0.0005 1 μA
IHBSO HB to VSS operating current f = 500 kHz, CLOAD = 0 0.03 1 mA
INPUT
VHIT_HI Input voltage high threshold 1.7 2.3 2.55 V
VHIT_LI Input voltage hig threshold 1.7 2.3 2.55 V
VLIT_HI Input voltage low threshold 1.2 1.6 1.9 V
VLIT_LI Input voltage low threshold 1.2 1.6 1.9 V
VIHYS  HI Input voltage Hysteresis 0.7 V
VIHYS  LI Input voltage Hysteresis 0.7 V
RIN_HI Input pulldown resistance VIN = 3V 68 kΩ
RIN_LI Input pulldown resistance VIN = 3V 68 kΩ
UNDERVOLTAGE PROTECTION (UVLO)
VDDR VDD turnon threshold 4.9 5.7 6.4 V
VDDHYS VDD threshold hysteresis 0.4 V
VHBR VHB turnon threshold 4.35 5.3 6.3 V
VHBHYS VHB threshold hysteresis 0.3 V
BOOTSTRAP DIODE
VF Low-current forward voltage I VDD - HB = 100 μA 0.65 0.85 V
VFI High-current forward voltage I VDD - HB = 100 mA 0.9 1.05 V
RD Dynamic resistance, ΔVF/ΔI I VDD - HB = 160 mA and 180 mA 0.3 0.55 0.85 Ω
LO GATE DRIVER
VLOL Low level output voltage ILO = 100 mA 0.07 0.19 V
VLOH High level output voltage ILO = -100 mA, VLOH = VDD – VLO 0.11 0.29 V
Peak pullup current(1) VLO = 0 V 3.7 A
Peak pulldown current(1) VLO = 12 V 4.5 A
HO GATE DRIVER
VHOL Low level output voltage IHO = 100 mA 0.07 0.19 V
VHOH High level output voltage IHO = –100 mA, VHOH = VHB- VHO 0.11 0.29 V
Peak pullup current(1) VHO = 0 V 3.7 A
Peak pulldown current(1) VHO = 12 V 4.5 A
(1) Parameter not tested in production.
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