Figure 8-5 shows a multiple pulses bench test circuit which uses L1 as the inductor load, and a group of control pulses are generated to evaluate driver and SiC MOSFET switching transient under different load conditions. The test conditions are: V_DC-Link = 600 V, VCC = 5 V, VDD = 15 V, VSS = –4 V, f_SW = 500 kHz, R_ON = 5.1 Ω, R_OFF = 1.0 Ω. Figure 8-6 shows the turn on and turn off waveforms at around 20 A current

Channel 1 (Yellow): Gate-source voltage signal on the low side MOSFET.

Channel 2 (Blue): Gate-source voltage signal on the high side MOSFET.

Channel 3 (Pink): Drain-source voltage signal for the low side MOSFET.

Channel 4 (Green): Drain-source current signal for the low side MOSFET.

In Figure 8-6, the gate drive signals on the high and low power transistor have a 100-ns dead time, and both signals are measured with >= 500 MHz bandwidth probes.

Figure 8-5 Bench Test Circuit with SiC MOSFET Switching

Figure 8-6 SiC MOSFET Switching Waveforms