SLVK099B March   2022  – September 2023 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. Depth, Range, and LETEFF Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
    1. 8.1 System Level Implications
  12. Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References
  16.   C Revision History

Abstract

The purpose of this study is to characterize the single-event-effects (SEE) performance due to heavy-ion irradiation of the TPS7H500x-SP. Destructive single-event-effects (DSEE) performance was verified at the maximum recommended voltage of 14 V. SET performance was verified over a variety of different operating conditions including: internal and external clock, FSW = 1 and 2 MHz, error amp (in unity gain), and cross conduction. For the transient characterization, input voltages of 4, 12, and 14 V were used (For TPS7H5002/3/4- SP only a nominal VIN of 12 V was used). Heavy-ions with LETEFF of 30.5 to 75 MeV·cm2/mg were used during the validation. A total of 11 devices were used for the data collection. Flux of ≈105 ions/cm2·s and fluences of ≈107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H500x-SP is SEL and SEB/SEGR free up to 75 MeV·cm2/mg, at T = 125°C and T = 25°C, respectively, and across the full electrical specifications. SET characterization is presented and discussed for a variety of different operating conditions. This report uses the QMLV TPS7H500X-SP device in a ceramic package. The report is also applicable for the QMLP TPS7H500X-SP device in a plastic package which uses the same die as the QMLV device.