SLVK125A november 2022 – may 2023 TPS7H4001-SP
PRODUCTION DATA
1.2 Device Details
Table 1-1 lists the device information used in the TID HDR characterization.
Table 1-1 Device and Exposure Details
| TID HDR Details: 3, 10 , 30 , 50 and 100 krad(Si) | |
|---|---|
| Package | 44-pin HTSSOP (DDW) |
| Quantity Tested | HDR: 5 biased and 5 unbiased units @ 3 krad(Si) levels 5 biased and 5 unbiased units @ 10 krad(Si) levels 5 biased and 5 unbiased units @ 30 krad(Si) levels 5 biased and 5 unbiased units @ 50 krad(Si) levels 22 biased and 5 unbiased units @ 100 krad(Si) levels |
| HDR Radiation Facility | CLAB, Texas Instruments, Dallas, Texas |
| HDR Dose Level | 3 krad(Si), 10 krad(Si), 30 krad(Si), 50 krad(Si) 100 krad(Si) |
| HDR Dose Rate | 200-250 rad(Si)/s ionizing radiation with increments |
| HDR Radiation Source | Gamma source At CLAB, Texas Instruments, Dallas, Texas |
| Irradiation and Test Temperature | Ambient, room temperature controlled to 24°C ±6°C per MIL-STD-883 and MIL-STD-750. |
Figure 1-1 TPS7H4001-SHP Devices Used in Exposure