During SEB/SEGR testing, the device was tested at room temperature. The same test conditions, in terms of biasing and voltage levels, apply for SEB/SEGR as was used during the SEL testing. In the case of the SEB/SEGR the device was tested in the following state machine states:

• Waiting to Sequence UP
  • All outputs are low (ENx = Low, SEQ_DONE = LOW, and PWRGD = Low)
  • The device is waiting for a rising edge in UP to start the sequence up.
  • VUP = 0V (only difference from the SEL biasing)
• Waiting to Sequence DOWN
  • All outputs are high (ENx = High, SEQ_DONE = High, and PWRGD = High)
  • The device is waiting for a falling edge in to start a sequence down.

For more configuration information, please refer to Table 6-1.

The results for six runs across three devices for SEB_X are shown in Table 8-3. Typical V_IN current vs time plots for SEB/SEGR on and off runs are shown in Figure 7-4 and Figure 7-5. Typical V_{PULL_UPx} current vs time plots for SEB/SEGR on and off runs are shown in Figure 7-6 through Figure 7-9.

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σ_SEB ≤ 6.15 × 10^–8cm²/device for LET_EFF = 75MeV·cm²/mg and T = 25°C.

On refers to be in the Waiting to Sequence DOWN state.

Figure 7-4 Current vs Time for I_IN: SEB On Run #4

Off refers to be in the Waiting to Sequence UP state.

Figure 7-5 Current vs Time for I_IN: SEB Off Run #5

Figure 7-6 Current vs Time for V_{PULL_UP1}: SEB On Run #4

Figure 7-7 Current vs Time for V_{PULL_UP2}: SEB On Run #4

Figure 7-8 Current vs Time for V_{PULL_UP1}: SEB Off Run #5

Figure 7-9 Current vs Time for V_{PULL_UP2}: SEB Off Run #5