SLVK173 July 2024 TPS7H4011-SP
- 1
- TPS7H4011-SP Single-Event Effects (SEE)
- Trademarks
- 1 Introduction
- 2 Single-Event Effects (SEE)
- 3 Device and Test Board Information
- 4 Irradiation Facility and Setup
- 5 Depth, Range, and LETEFF Calculation
- 6 Test Setup and Procedures
- 7 Destructive Single-Event Effects (DSEE)
- 8 Single-Event Transients (SET)
- 9 Event Rate Calculations
- 10Summary
- A Total Ionizing Dose from SEE Experiments
- B References
7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using the EN-pin by forcing 0V (using Channel 1 of a E36311A Keysight PS). During the SEB/SEGR testing with the device enabled/disabled, not a single input current event was observed.
The species used for the SEB testing was Homium (165Ho @ 15MeV/nucleon). For the 165Ho ion an angle of incedence of 0° was used to achieve an LETEFF = 75MeV·cm2/mg (for more details refer to Ion LETEFF, Depth, and Range in Silicon). The kinetic energy in the vacuum for this ion is 2.474GeV (15-MeV/amu line). Flux of approximately 5 × 104 ions/cm2× s and a fluence of approximately 107 ions/cm2 was used for the run. Run duration to achieve this fluence was approximately four minutes. The four devices (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended input voltage of 14-V with the max recommended load of 12A. No SEB/SEGR current events were observed during the eight runs, indicating that the TPS7H4011-SP is SEB/SEGR-free up to LETEFF = 75 MeV × cm2/ mg and across the full electrical specifications. Summary of TPS7H4011-SP SEB/SEGR Test Condition and Results shows the SEB/SEGR test conditions and results.
| Run Number | Unit Number | ION | LETEFF (MeV × cm2/mg) | FLUX (ions × cm2/mg) | FLUENCE (# ions) | Enabled Status | VIN | IOUT (A) | SEB EVENT? |
|---|---|---|---|---|---|---|---|---|---|
| 5 | 1 | 165Ho | 75 | 3.10 x 104 | 9.99 x 106 | EN | 14 | 12 | No |
| 6 | 165Ho | 75 | 3.09 × 104 | 9.99 × 106 | DIS | 14 | 12 | No | |
| 7 | 2 | 165Ho | 75 | 5.92 × 104 | 1.00 × 107 | EN | 14 | 12 | No |
| 8 | 165Ho | 75 | 5.56 × 104 | 1.00 × 107 | DIS | 14 | 12 | No | |
| 9 | 3 | 165Ho | 75 | 5.90 × 104 | 1.00 × 107 | EN | 14 | 12 | No |
| 10 | 165Ho | 75 | 5.96 × 104 | 1.00 × 107 | DIS | 14 | 12 | No | |
| 11 | 4 | 165Ho | 75 | 6.72 × 104 | 1.00 × 107 | EN | 14 | 12 | No |
| 12 | 165Ho | 75 | 6.91 x 104 | 1.00 x 107 | DIS | 14 | 12 | No |
Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:
σSEB ≤ 4.61 × 10-8 cm2/ device for LETEFF = 75MeV × cm2/mg and T = 25°C.
Figure 7-2 SEB On Current vs Time for Run 5 of the TPS7H4011-SP at T = 25°C (VOUT = 3.3V)
Figure 7-3 SEB Off Current vs Time for Run 6 of the TPS7H4011-SP at T = 25°C (VOUT = 0-V)