SLVS432F September   2002  – June 2015 TPS62050 , TPS62051 , TPS62052 , TPS62054 , TPS62056

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Typical Application Schematic
  5. 5 Revision History
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Enable and Overtemperature Protection
      2. 9.3.2 Low-Battery Detector (Standard Version)
      3. 9.3.3 ENABLE / Low-Battery Detector (Enhanced Version) TPS62051 Only
      4. 9.3.4 Undervoltage Lockout
      5. 9.3.5 Power Good Comparator
      6. 9.3.6 Synchronization
    4. 9.4 Device Functional Modes
      1. 9.4.1 Soft-Start
      2. 9.4.2 Constant Frequency Mode Operation (SYNC = HIGH)
      3. 9.4.3 Power-Save Mode Operation (SYNC = LOW)
      4. 9.4.4 100% Duty Cycle Low Dropout Operation
      5. 9.4.5 No Load Operation
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Standard Circuit for Adjustable Version
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Inductor Selection
          2. 10.2.1.2.2 Output Capacitor Selection
          3. 10.2.1.2.3 Input Capacitor Selection
          4. 10.2.1.2.4 Feedforward Capacitor
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Standard Circuit for Fixed Voltage Version
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curves
    3. 10.3 System Examples
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Related Links
    3. 13.3 Community Resource
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

8 Specifications

8.1 Absolute Maximum Ratings

Over operating free-air temperature range unless otherwise noted(1)
MIN MAX UNIT
VI Supply voltage –0.3 11 V
Voltage at EN, SYNC –0.3 VI V
Voltage at LBI, FB, LBO, PG –0.3 7 V
Voltage at SW –0.3 11(2) V
IO Output current 850 mA
TJ Maximum junction temperature 150 °C
TA Operating free-air temperature –40 85 °C
Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds 300 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The voltage at the SW pin is sampled in PFM mode 15 µs after the PMOS has switched off. During this time the voltage at SW is limited to 7 V maximum. Therefore, the output voltage of the converter is limited to 7 V maximum.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

MIN NOM MAX UNIT
Supply voltage at VI 2.7 10 V
Voltage at PG, LBO 6 V
Maximum output current 800(1) mA
Operating junction temperature –40 125 °C
(1) Assuming no thermal limitation

8.4 Thermal Information

THERMAL METRIC(1) TPS6205x UNIT
DGS (VSSOP)
10 PINS
RθJA Junction-to-ambient thermal resistance 154 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 50.6 °C/W
RθJB Junction-to-board thermal resistance 73.6 °C/W
ψJT Junction-to-top characterization parameter 5.1 °C/W
ψJB Junction-to-board characterization parameter 72.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

VI = 7.2 V, VO = 3.3 V, IO = 300 mA, EN = VI, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VI Input voltage 2.7 10 V
I(Q) Operating quiescent current IO = 0 mA, SYNC = GND, VI = 7.2 V 12 20 µA
I(SD) Shutdown current EN = GND 1.5 5 µA
EN = GND, TA = 25°C 1.5 3
IQ(LBI) Quiescent current with enhanced LBI comparator version. EN = VI, LBI = GND, TPS62051 only 5 µA
ENABLE
VIH EN high level input voltage 1.3 V
VIL EN low level input voltage 0.3 V
EN trip point hysteresis 100 mV
Ilkg EN input leakage current EN = GND or VIN, VI = 7.2 V 0.01 0.2 µA
I(EN) EN input current 0.6 V ≤ V(EN) ≤ 4 V 2 µA
V(UVLO) Undervoltage lockout threshold 1.6 V
POWER SWITCH
RDS(ON) P-channel MOSFET ON-resistance VI ≥ 5.4 V; IO = 300 mA 400 650 mΩ
VI = 2.7 V; IO = 300 mA 600 850
P-channel MOSFET leakage current VDS = 10 V 1 µA
P-channel MOSFET current limit VI = 7.2V, VO = 3.3 V 1000 1200 1400 mA
RDS(ON) N-channel MOSFET ON-resistance VI ≥ 5.4 V; IO = 300 mA 300 450 mΩ
VI = 2.7 V; IO = 300 mA 450 550
N-channel MOSFET leakage current VDS = 6 V 1 µA
POWER GOOD OUTPUT, LBI, LBO
V(PG) Power good trip voltage Vml –2% V
Power good delay time VO ramping positive 50 µs
VO ramping negative 200
VOL PG, LBO output low voltage V(FB) = 0.8 × VO nominal, I(sink) = 1 mA 0.3 V
PG, LBO output leakage current V(FB) = VO nominal, V(LBI) = VI 0.01 0.25 µA
Minimum supply voltage for valid power good, LBO signal 2.3 V
V(LBI) Low-battery input trip voltage Input voltage falling 1.21 V
Low-battery input trip point accuracy 1.5%
V(LBI,HYS) Low-battery input hysteresis 15 mV
Ilkg(LBI) LBI leakage current 0.01 0.1 µA
OSCILLATOR
fS Oscillator frequency 600 850 1000 kHz
f(SYNC) Synchronization range 600 1200 kHz
VIH SYNC high-level input voltage 1.5 V
VIL SYNC low-level input voltage 0.3 V
Ilkg SYNC input leakage current SYNC = GND or VIN 0.01 0.1 µA
SYNC trip point hysteresis 100 mV
Duty cycle of external clock signal 20% 90%
OUTPUT
VO Adjustable output voltage TPS62050, TPS62051 0.7 6 V
V(FB) Feedback voltage TPS62050, TPS62051 0.5 V
FB leakage current TPS62050, TPS62051 0.02 0.1 µA
Feedback voltage tolerance TPS62050, TPS62051 VI = 2.7 V to 10 V, 0 mA < IO < 600 mA –3% 3%
Fixed output voltage tolerance(1) TPS62052 VI = 2.7 V to 10 V, 0 mA < IO < 600 mA –3% 3%
TPS62054 VI = 2.7 V to 10 V, 0 mA < IO < 600 mA –3% 3%
TPS62056 VI = 3.75 V to 10 V, 0 mA < IO < 600 mA –3% 3%
Resistance of internal voltage divider for fixed-voltage versions 700 1000 1300 kΩ
Line regulation VO = 3.3 V, VI = 5 V to 10 V, IO = 600 mA 5.2 mV/V
Load regulation VI = 7.2 V; IO = 10 mA to 600 mA 0.0045 %/mA
η Efficiency VI = 5 V; VO = 3.3 V; IO = 300 mA 93%
VI = 3.6 V; VO = 2.5 V; IO = 200 mA 93%
Duty cycle range for main switches 100%
Minimum ton time for main switch 100 ns
Shutdown temperature 145 °C
Start-up time IO = 200 mA, VI = 5 V, Vo = 3.3 V,
Co = 22 µF, L = 10 µH		 1 ms
(1) The worst case RDS(ON) of the PMOS in 100% mode for an input voltage of 3.3 V is 0.75 Ω. This value can be used to determine the minimum input voltage if the output current is less than 600 mA with the TPS62056.

8.6 Typical Characteristics

TPS62050 TPS62051 TPS62052 TPS62054 TPS62056 SF_v_TA_lvs432.gifFigure 1. Switching Frequency vs Free-Air Temperature
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