SLVS440C January   2003  – December 2014 TPS61045

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Dissipation Rating
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7  Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Peak Current Control
      2. 7.3.2 Softstart
      3. 7.3.3 Enable (CTRL Pin)
      4. 7.3.4 DAC Output (DO)
      5. 7.3.5 Digital Interface (CTRL)
      6. 7.3.6 UVLO
      7. 7.3.7 Thermal Shutdown
    4. 7.4 Device Functional Modes
  8. 8  Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Analog Adjusted Output Voltage
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Inductor Selection, Maximum Load Current
          2. 8.2.1.2.2 Setting the Output Voltage
          3. 8.2.1.2.3 Output Capacitor Selection
          4. 8.2.1.2.4 Input Capacitor Selection
          5. 8.2.1.2.5 Diode Selection
        3. 8.2.1.3 Application Curves
      2. 8.2.2 OLED Supply with Higher Output Current
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage VVIN(2) –0.3 7 V
Voltage VCTRL, V(FB), VL, VDO(2) –0.3 VIN + 0.3 V
Voltage VSW(2) 30 V
Continuous power dissipation See Dissipation Rating
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±1500 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN TYP MAX UNIT
VVIN Input voltage range 1.8 6 V
VSW Switch voltage 30 V
L Inductor (1) 4.7 μH
ƒ Switching frequency(1) 1 MHz
CI(C2) Input capacitor (C2) (1) 4.7 μF
CO(C3) Output capacitor (C3) (1) 1 μF
TA Operating ambient temperature –40 85 °C
TJ Operating junction temperature –40 125 °C
(1) See application section for further information.

6.4 Thermal Information

over operating free-air temperature range (unless otherwise noted)
THERMAL METRIC(1) TPS61045 UNIT
VSON (8 PINS)
RΘJA(2) Junction-to-ambient thermal resistance 270 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Standard 2-layer PCB without vias for the thermal pad. See the application section on how to improve the thermal resistance RΘJA.

6.5 Dissipation Rating

PACKAGE TA ≤ 25°C
POWER RATING		 DERATING FACTOR ABOVE TA = 25°C TA = 70°C
POWER RATING		 TA = 85°C
POWER RATING
8-pin VSON (DRB) (1) 370 mW 3.7 mW/°C 204 mW 148 mW
(1) See Thermal Information for the junction-to-ambient thermal resistance.

6.6 Electrical Characteristics

VIN = 2.4 V, CTRL = VIN, VO = 18 V, IO = 10 mA, TA = –40°C to 85°C, typical values are at TA = 25° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VIN Input voltage range 1.8 6 V
IQ Operating quiescent current IO = 0 mA, not switching 40 65 μA
IO(SD) Shutdown current CTRL = GND 0.1 1 μA
UVLO Undervoltage lockout (UVLO) threshold VIN falling 1.5 1.7 V
CTRL AND DAC OUTPUT
VIH CTRL high-level input voltage 1.3 V
VIL CTRL low-level input voltage 0.3 V
Ilkg CTRL input leakage current CTRL = GND or VIN 0.1 μA
VO(DO) DAC output voltage range 0 1.233 V
DAC resolution 6 bit 19.6 mV
VO(DO) DAC center output voltage CTRL = high 607 mV
IO(SINK) Maximum DAC sink current 30 μA
tUP Increase output voltage one step CTRL = High to low to high 1 60 μs
tDWN Decrease the output voltage one step CTRL = High to low to high 140 240 μs
td1 Delay time between up and down steps CTRL = Low to high to low 1 μs
tOFF Shutdown CTRL = High to low to high 560 μs
INPUT SWITCH (Q1), MAIN SWITCH (Q2), AND CURRENT LIMIT
VSW(Q2) Main switch maximum voltage (Q2) 30 V
rDS(on) Main switch MOSFET on-resistance VIN = 2.4 V; IS = 200 mA 400 800 mΩ
Ilkg Main switch MOSFET leakage current VS = 28 V 0.1 10 μA
ILIM Main switch MOSFET current limit 300 375 450 mA
rDS(on) Input switch MOSFET on-resistance VIN = 2.4 V; IS = 200 mA 1 2 Ω
Ilkg Input switch MOSFET leakage current VL = GND, VIN = 6 V 0.1 10 μA
OUTPUT
VO Output voltage range VIN 28 V
Vref Internal voltage reference 1.233 V
IFB Feedback input bias current V(FB) = 1.3 V 30 100 nA
VFB Feedback trip point voltage 1.8 V ≤ VIN ≤ 6 V; VO = 18 V, ILOAD = 10 mA 1.208 1.233 1.258 V
Feedback trip point voltage 1.8 V ≤ VIN≤ 3.6 V; VO = 18 V,
ILOAD = 10 mA , TA = 0°C to 85°C		 1.214 1.233 1.251 V

6.7 Typical Characteristics

Table 1. Table of Graphs

Graph Title Figure
η Efficiency vs Load Current Figure 1
Efficiency vs Input Voltage Figure 2
IDD(Q) Quiescent Current vs Input Voltage Figure 3
VFB Feedback Voltage vs Temperature Figure 4
IFB Feedback Current vs Temperature Figure 5
rDS(on) rDS(on) Main Switch Q2 vs Temperature Figure 6
rDS(on) Main Switch Q2 vs Input Voltage Figure 7
rDS(on) Input Switch Q1 vs Temperature Figure 8
rDS(on) Input Switch Q1 vs Input Voltage Figure 9
VDO VDO Voltage vs CTRL Input Step Figure 10
Line Transient Response Figure 13
Load Transient Response Figure 14
PFM Operation Figure 15
Softstart Figure 16
eff_v_io_lvs440.gif
Figure 1. Efficiency vs Load Current
iddq_v_vi__lvs440.gif
Figure 3. Quiescent Current vs Input Voltage
eff_v_vi_lvs440.gif
Figure 2. Efficiency vs Input Voltage
vfb_v_ta_lvs440.gif
Figure 4. Feedback Voltage vs Temperature
ifb_v_ta_lvs440.gif
Figure 5. Feedback Current vs Temperature
rds_q2_v_vi_lvs440.gif
Figure 7. rDS(on) Main Switch Q2 vs Input Voltage
rds_q1_v_vi_lvs440.gif
Figure 9. rDS(on) Input Switch Q1 vs Input Voltage
rds_q2_v_ta_lvs440.gif
Figure 6. rDS(on) Main Switch Q2 vs Temperature
rds_q1_v_ta_lvs440.gif
Figure 8. rDS(on) Input Switch Q1 vs Temperature
vdo_v_isn_lvs440.gif
Figure 10. V(DO) Voltage vs CTRL Input Step
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