SUPPLY |
VIN |
Input voltage range |
|
2 |
|
6 |
V |
IOUT |
Output current |
2.3 V ≤ VIN ≤ 6 V |
|
|
300 |
mA |
2 V ≤ VIN ≤ 2.3 V |
|
|
150 |
IQ |
Operating quiescent current |
IOUT = 0 mA. PFM mode enabled (MODE = GND) device not switching |
|
15 |
|
μA |
IOUT = 0 mA. PFM mode enabled (MODE = GND) device switching, VOUT = 1.8 V, (1) |
|
18.5 |
|
IOUT = 0 mA, switching with no load (MODE = VIN), PWM operation , VOUT = 1.8 V, VIN = 3 V |
|
3.8 |
|
mA |
ISD |
Shutdown current |
EN = GND |
|
0.1 |
1 |
μA |
UVLO |
Undervoltage lockout threshold |
Falling |
|
1.85 |
|
V |
Rising |
|
1.95 |
|
ENABLE, MODE |
VIH |
High level input voltage, EN, MODE |
2 V ≤ VIN ≤ 6 V |
1 |
|
VIN |
V |
VIL |
Low level input voltage, EN, MODE |
2 V ≤ VIN ≤ 6 V |
0 |
|
0.4 |
V |
IIN |
Input bias current, EN, MODE |
EN, MODE = GND or VIN |
|
0.01 |
1 |
μA |
POWER SWITCH |
|
RDS(on) |
High-side MOSFET ON-resistance |
VIN = VGS = 3.6 V, TA = 25°C |
|
240 |
480 |
mΩ |
Low-side MOSFET ON-resistance |
|
180 |
380 |
ILIMF |
Forward current-limit MOSFET high-side and low-side |
VIN = VGS = 3.6 V |
0.56 |
0.7 |
0.84 |
A |
TSD |
Thermal shutdown |
Increasing junction temperature |
|
140 |
|
°C |
|
Thermal shutdown hysteresis |
Decreasing junction temperature |
|
20 |
|
°C |
OSCILLATOR |
|
fSW |
Oscillator frequency |
2 V ≤ VIN ≤ 6 V |
2 |
2.25 |
2.5 |
MHz |
OUTPUT |
|
VOUT |
Adjustable output voltage range |
|
0.6 |
|
VIN |
V |
VREF |
Reference voltage |
|
|
600 |
|
mV |
VFB |
Feedback voltage |
MODE = VIN, PWM operation, 2 V ≤ VIN ≤ 6 V, in fixed output voltage versions VFB = VOUT, see (3)
|
–1.5% |
0% |
1.5% |
|
Feedback voltage PFM mode |
MODE = GND, device in PFM mode |
|
0% |
|
Load regulation |
PWM mode |
|
-0.5 |
|
%/A |
tStart Up |
Start-up Time |
Time from active EN to reach 95% of VOUT nominal |
|
500 |
|
μs |
tRamp |
VOUT ramp-up time |
Time to ramp from 5% to 95% of VOUT |
|
250 |
|
μs |
Ilkg |
Leakage current into SW pin |
VIN = 3.6 V, VIN = VOUT = VSW, EN = GND,(2) |
|
0.1 |
1 |
μA |