米6体育平台手机版

SLVSAX7E August 2011 – August 2016

PRODUCTION DATA.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Voltage at VIN1, VIN2, LX1, LX2	–0.3	20	V
Voltage at LX1, LX2 (maximum withstand voltage transient < 10 ns)	–1	23	V
Voltage at BST1, BST2, referenced to LX1, LX2 pin	–0.3	7	V
Voltage at VCC, EN1, EN2, COMP1, COMP2, LOW_P	–0.3	7	V
Voltage at SS1, SS2, FB1, FB2, ROSC	–0.3	3.6	V
Voltage at AGND, GND	–0.3	0.3	V
Operating virtual junction temperature, T_J	–40	150	°C
Storage temperature, T_stg	–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN	Input operating voltage	4.5	18	V
T_J	Junction temperature	–40	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾⁽²⁾		TPS65270		UNIT
		PWP (HTSSOP)	RGE (VQFN)
		24 PINS	24 PINS
R_θJA	Junction-to-ambient thermal resistance	41.3	33.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	23.9	36.2	°C/W
R_θJB	Junction-to-board thermal resistance	22.6	12.1	°C/W
ψ_JT	Junction-to-top characterization parameter	0.8	0.4	°C/W
ψ_JB	Junction-to-board characterization parameter	22.4	12.2	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	4	2.5	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

(2) See PowerPAD™ Thermally Enhanced Package.

7.5 Electrical Characteristics

T_A = –40°C to 125°C, V_IN = 12 V, f_SW = 625 kHz (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT SUPPLY
V_IN	Input Voltage	VIN1 and VIN2	4.5		18	V
IDD_SDN	Shutdown	EN1 = EN2 = 0 V		10		µA
IDD_{Q_nsw}	Nonswitching quiescent power supply current	V_FB1 = V_FB2 = 900 mV, LOW_P = high		1		mA
UVLO	V_IN undervoltage lockout	Rising V_IN	4	4.2	4.45	V
		Falling V_IN	3.65	3.85	4.1
		Hysteresis		0.35
V_CC	Internal biasing supply	V_CC load current = 0 A, V_IN = 12 V		6.25		V
V_{CC_drop}	V_CCLDO Dropout Voltage	V_IN = 5 V, V_CC load current = 20 mA		180		mV
I_VCC	V_CC current limit	4.5 V < V_IN < 18 V		200		mA
FEEDBACK AND ERROR AMPLIFIER
V_FB	Regulated feedback voltage	V_IN = 12 V , V_COMP = 1.2 V, T_J = 25°C	–1%	0.8	1%	V
V_FB	Regulated feedback voltage	V_IN = 12 V, V_COMP = 1.2 V, T_J = –40°C to 125°C	–2%	0.8	2%	V
V_LINEREG	Line regulation: DC	V_IN = 4.5 V to 18 V, I_OUT = 1 A		0.5		%/V
V_LOADREG	Load regulation: DC	I_OUT = 10% to 90%, I_OUT,MAX		0.4		%/A
G_{m_EA}	Error amplifier transconductance	–2 µA < I_COMP < 2 µA		130		µs
G_{m_SRC}	COMP voltage to inductor current Gm	ILX = 0.5 A		10		A/V
ENABLE, PFM MODE AND SOFT START
V_EN	EN1 and EN2 pin threshold	Rising	1.55			V
V_EN	EN1 and EN2 pin threshold	Falling			0.4	V
V_PSM	PSM low power mode threshold	Rising	1.55			V
V_PSM	PSM low power mode threshold	Falling			0.4	V
I_SS	SS1 and SS2 soft-start charging current			5		µA
OSCILLATOR
F_{SW_BK}	Switching frequency	Set by external resistor ROSC	0.3		1.4	MHz
F_SW	Programmable frequency	ROSC = 250 kΩ	0.85	1	1.15	MHz
F_SW	Programmable frequency	ROSC = 500 kΩ	425	500	575	kHz
PROTECTION
I_LIMIT1	Buck 1 peak inductor current limit	4.5 V < V_IN < 18 V		3.2		A
I_{LIMIT1_LS1}	Buck 1 low side MOSFET current limit	4.5 V < V_IN < 18 V		2		A
I_LIMIT2	Buck 2 peak inductor current limit	4.5 V < V_IN < 18 V		4.1		A
I_{LIMIT1_LS2}	Buck 2 low side MOSFET current limit	4.5 V < V_IN < 18 V		2		A
MOSFET ON-RESISTANCES
R_{dson_HS1}	On resistance of high side FET on CH1	BST1 to LX1 = 6.25 V		120		mΩ
R_{dson_LS1}	On resistance of low side FET on CH1	V_IN = 12 V		80		mΩ
R_{dson_HS2}	On resistance of high side FET on CH2	BST2 to LX2 = 6.25 V		95		mΩ
R_{dson_LS2}	On resistance of low side FET on CH2	V_IN = 12 V		50		mΩ
T_{on_min}	Minimum in time			80	120	ns
THERMAL SHUTDOWN
T_TRIP	Thermal protection trip point	Rising temperature		160		°C
T_HYST	Thermal protection hysteresis			20		°C