SLVSBD0B November   2012  – June 2020

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application as USB Power Switch
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Overcurrent Conditions
      2. 8.3.2 Reverse-Voltage Protection
      3. 8.3.3 FAULT Response
      4. 8.3.4 Undervoltage Lockout (UVLO)
      5. 8.3.5 Enable (EN)
      6. 8.3.6 Thermal Sense
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
      1. 8.5.1 Programming the Current-Limit Threshold
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Constant-Current and Impact on Output Voltage
      2. 9.1.2 Accounting for Resistor Tolerance
      3. 9.1.3 Input and Output Capacitance
    2. 9.2 Typical Applications
      1. 9.2.1 Application 1: Designing Above a Minimum Current-Limit
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Application 2: Designing Below a Maximum Current-Limit
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
      3. 9.2.3 Application 3: Auto-Retry Functionality
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
      4. 9.2.4 Application 4: Two-Level Current-Limit Circuit
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
      5. 9.2.5 Application 5: Typical Application as USB Power Switch
        1. 9.2.5.1 Design Requirements
        2. 9.2.5.2 Detailed Design Procedure
          1. 9.2.5.2.1 Universal Serial Bus (USB) Power-Distribution Requirements
  10. 10Power Supply Recommendations
    1. 10.1 USB Self-Powered (SPH) and Bus-Powered (BPH) Hubs
    2. 10.2 USB Low-Power Bus-Powered and High-Power Bus-Powered Functions
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation and Junction Temperature
  12. 12Device and Documentation Support
    1. 12.1 Device Support
    2. 12.2 Support Resource
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

over recommended operating conditions, VEN = VIN, RFAULT = 10 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
rDS(on) Static drain-source on-state resistance DBV package, TA = 25°C 85 95 mΩ
DBV package, –40°C ≤TA ≤125°C 135
tr Rise time, output VIN = 6.5 V CL = 1 μF, RL = 100 Ω,
(see Figure 19)		 1.1 1.5 ms
VIN = 2.5 V 0.7 1
tf Fall time, output VIN = 6.5 V 0.2 0.5
VIN = 2.5 V 0.2 0.5
ENABLE INPUT EN OR EN
Enable pin turn on/off threshold 0.66 1.1 V
IEN Input current VEN = 0 V or 6.5 V, VEN = 0 V or 6.5 V –0.5 0.5 μA
ton Turnon time CL = 1 μF, RL = 100 Ω, (see Figure 19) 3 ms
toff Turnoff time 3 ms
CURRENT-LIMIT
IOS Current-limit threshold (Maximum DC output current IOUT delivered to load) and Short-circuit current, OUT connected to GND RILIM = 15 kΩ –40°C ≤TA ≤105°C 1610 1700 1800 mA
RILIM = 20 kΩ TA = 25°C 1215 1295 1375
–40°C ≤TA ≤125°C 1200 1295 1375
RILIM = 49.9 kΩ TA = 25°C 490 520 550
–40°C ≤TA ≤125°C 475 520 565
RILIM = 210 kΩ 100 130 150
ILIM shorted to IN 50 75 100
tIOS Response time to short circuit VIN = 5 V (see Figure 20) 2 μs
REVERSE-VOLTAGE PROTECTION
Reverse-voltage comparator trip point
(VOUT – VIN)		 95 135 190 mV
Time from reverse-voltage condition to MOSFET turn off VIN = 5 V 3 5 7 ms
SUPPLY CURRENT
IIN_off Supply current, low-level output VIN = 6.5 V, No load on OUT, VEN = 0 V 0.1 1 μA
IIN_on Supply current, high-level output VIN = 6.5 V, No load on OUT RILIM = 20 kΩ 120 140 μA
RILIM = 210 kΩ 100 120 μA
IREV Reverse leakage current VOUT = 6.5 V, VIN = 0 V TA = 25 °C 0.01 1 μA
UNDERVOLTAGE LOCKOUT
UVLO Low-level input voltage, IN VIN rising 2.35 2.45 V
Hysteresis, IN TA = 25 °C 25 mV
FAULT FLAG
VOL Output low voltage, FAULT I/FAULT = 1 mA 180 mV
Off-state leakage V/FAULT = 6.5 V 1 μA
FAULT deglitch FAULT assertion or de-assertion due to overcurrent condition 5 8 11 ms
FAULT assertion or de-assertion due to reverse-voltage condition 2 4 6 ms
THERMAL SHUTDOWN
Thermal shutdown threshold 155 °C
Thermal shutdown threshold in current-limit 135 °C
Hysteresis 10 °C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
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