SLVSC31D December 2013 – August 2015
PRODUCTION DATA.
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
SHDN | 1 | I | Shutdown. SHDN is used to put the TPS7A4501 regulator into a low-power shutdown state. The output is off when SHDN is pulled low. SHDN can be driven by 5-V logic, 3-V logic, or open-collector logic with a pullup resistor. The pullup resistor is required to supply the pullup current of the open-collector gate, normally several microamperes, and SHDN current, typically 3 μA. If unused, the user must connect SHDN to VIN. The device is in the low-power shutdown state if SHDN is not connected. |
IN | 2 | I | Input. Power is supplied to the device through IN. A bypass capacitor is required on this pin if the device is more than six inches away from the main input filter capacitor. In general, the output impedance of a battery rises with frequency, so it is advisable to include a bypass capacitor in battery-powered circuits. A bypass capacitor (ceramic) in the range of 1 to 10 μF is sufficient. The TPS7A4501 regulator is designed to withstand reverse voltages on IN with respect to ground and on OUT. In the case of a reverse input, which can happen if a battery is plugged in backwards, the device functions as if there is a diode in series with its input. No reverse current flows into the regulator, and no reverse voltage appears at the load. The device protects both itself and the load. |
3 | |||
4 | |||
NC | 5 | NC | This pin is not connected to any internal circuitry. It can be left floating or tied to VIN or GND. |
OUT | 6 | O | Output. The output supplies power to the load. To prevent oscillations, use a minimum output capacitor (ceramic) of 10 μF. Applications with large transient loads to limit peak voltage transients require larger output capacitors. |
7 | |||
8 | |||
ADJ | 9 | I | Adjust. This is the input to the error amplifier. ADJ is internally clamped to ±7 V. It has a bias current of 3 μA that flows into the pin. ADJ voltage is 1.21 V referenced to ground, and the output voltage range is 1.21 to 20 V. |
GND | 10 | — | Ground |
Thermal Vias(1) | — | — | The exposed thermal vias of the HKU package should be connected to a wide ground plane for effective heat dissipation. Refer to Figure 30 and Figure 31 for the typical footprint of the HKU package. |
DIE THICKNESS | BACKSIDE FINISH | BACKSIDE POTENTIAL | BOND PAD METALLIZATION COMPOSITION |
BOND PAD THICKNESS |
---|---|---|---|---|
15 mils | Silicon with backgrind | Floating | TiW/AlCu2 | 1627 nm |
DESCRIPTION | PAD NUMBER | X MIN | Y MIN | X MAX | Y MAX |
---|---|---|---|---|---|
SHDN | 1 | 1729.25 | 55.5 | 1879.25 | 205.5 |
IN | 2 | 1037.25 | 875 | 1187.25 | 1025 |
IN | 3 | 1460.75 | 1255.5 | 1610.75 | 1405.5 |
IN | 4 | 1037.75 | 1384.5 | 1187.75 | 1534.5 |
OUT | 5 | 774.25 | 1634.75 | 924.25 | 1784.75 |
OUT | 6 | 675.25 | 1166 | 825.25 | 1316 |
OUT | 7 | 345.5 | 1299.25 | 495.5 | 1449.25 |
SENSE/ADJ | 8 | 55.5 | 213 | 205.5 | 363 |
GND | 9 | 244 | 17.5 | 394 | 167.5 |