SNAK020 January   2024 LMX1906-SP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2Test Method
  6. 3Results
  7. 4References
  8.   A RLAT Data and Plots

Test Method

The devices under test (DUTs) were put through a 240-hour burn-in with the units biased and operational at 125°C ambient prior to the radiation testing.

Irradiation and electrical testing were done at Texas Instruments Radiation Test Facility in Santa Clara, California.

The DUTs were placed in socketed bias boards (as shown in Figure 2-1), powered up, irradiated and electrically tested at 0, 30, 50, and 100krad (Si). All specified data sheet and SMD parameters were tested. In addition to the specified parameters, the test program tests many other parameters to verify the proper operation of the device. Limits are set using a six sigma baseline.

GUID-20240103-SS0I-4SHB-VJLG-6VGDJQMKFXFZ-low.jpgFigure 2-1 LMX1906-SP TID Bias Board
Table 2-1 RLAT Conditions
Wafer lot2013693
Number samples tested6
DUT serial numbers163-168
Test locationTexas Instruments, Santa Clara, CA
Bias board schematic356SCH23
Bias board edge number6647792
Supply voltage2.5V
Supply current1.4A per unit
Input frequency800MHz
Output frequency3200MHz
Test programsGQR1906AA
Electrical test supply voltage2.5V
Dose Rate23.8rad/s
Test points0, 30, 50, 100krad (Si)
Test datesDec. 11, 2023