8 Summary

The radiation effects of the LMP7704-SP, a radiation-hardened precision amplifier with a rail-to-rail input and output and CMOS input stage, were studied. Initial characterization showed the device passed and is latch-up immune up to LET_EFF = 85 MeV-cm²/mg and T = 125°C. SET was characterized from LET_EFF = 2 MeV-cm²/mg to LET_EFF = 85 MeV-cm²/mg. The worst-case transients and the cross-section plots are included. Testing was performed under multiple configurations and supply voltages.

Subsequent correlation testing showed the device can be vulnerable to SEL under very specific circuit criteria. An exposed die can theoretically occur as a result of external factors, such as preexisting damage. If significant bulk decoupling capacitance is present at the pins, such that a large charge bucket is present, an ion strike in the right portion of the die can activate an ESD structure and create a low-impedance path between the supplies. While this event is unlikely for most implementations, preventative and mitigating actions are proposed for risk management and reduction purposes.