4 Effect of Temperature on Electro-Migration

Electro-migration is one the dominant wearout mechanisms in semiconductors. The most important variable with respect to electro-migration is the junction temperature (T_J) of the silicon. Assuming the device is operating within the specified data sheet voltage, the critical variable influencing silicon lifetime under electrical bias is the junction temperature (T_J) of the silicon.

Figure 2 shows how the onset of EM changes with T_J on a TI proprietary silicon node. Note that EM performance may differ per technology but the principle of fail rate vs temperature will apply: running at temperature extremes for long durations above 105°C will shorten the lifetime.

Figure 2. Impact of Electro-Migration on a TI Embedded Processor Over Temperature

An often quoted rule of thumb in electronics reliability for capacitors is that every 10°C increase, the lifetime approximately halves. For semiconductors, it is a similar change but there is slippage at higher temperatures.

Because of this, it is recommended looking at two situations of power on conditions: at or below 105°C and above 105°C.