SPRZ439H January   2017  – February 2024 TMS320F280040-Q1 , TMS320F280040C-Q1 , TMS320F280041 , TMS320F280041-Q1 , TMS320F280041C , TMS320F280041C-Q1 , TMS320F280045 , TMS320F280048-Q1 , TMS320F280048C-Q1 , TMS320F280049 , TMS320F280049-Q1 , TMS320F280049C , TMS320F280049C-Q1

 

  1.   1
  2.   TMS320F28004x Real-Time MCUs Silicon Errata (Silicon Revisions B, A, 0)
  3. 1Usage Notes and Advisories Matrices
    1. 1.1 Usage Notes Matrix
    2. 1.2 Advisories Matrix
  4. 2Nomenclature, Package Symbolization, and Revision Identification
    1. 2.1 Device and Development Support Tool Nomenclature
    2. 2.2 Devices Supported
    3. 2.3 Package Symbolization and Revision Identification
  5. 3Silicon Revision B Usage Notes and Advisories
    1. 3.1 Silicon Revision B Usage Notes
      1. 3.1.1 PIE: Spurious Nested Interrupt After Back-to-Back PIEACK Write and Manual CPU Interrupt Mask Clear
      2. 3.1.2 FPU32 and VCU Back-to-Back Memory Accesses
      3. 3.1.3 Caution While Using Nested Interrupts
      4. 3.1.4 Security: The primary layer of defense is securing the boundary of the chip, which begins with enabling JTAGLOCK and Zero-pin Boot to Flash feature
    2. 3.2 Silicon Revision B Advisories
      1.      Advisory
      2.      Advisory
      3.      Advisory
      4.      Advisory
      5.      Advisory
      6.      Advisory
      7.      Advisory
      8.      Advisory
      9.      Advisory
      10.      Advisory
      11.      Advisory
      12.      Advisory
      13.      Advisory
      14.      Advisory
      15.      Advisory
      16.      Advisory
      17. 3.2.1 Advisory
      18.      Advisory
      19.      Advisory
      20.      Advisory
      21.      Advisory
      22. 3.2.2 Advisory
      23.      Advisory
      24.      Advisory
      25.      Advisory
      26.      Advisory
      27.      Advisory
      28. 3.2.3 Advisory
      29.      Advisory
      30.      Advisory
      31. 3.2.4 Advisory
  6. 4Silicon Revision A Usage Notes and Advisories
    1. 4.1 Silicon Revision A Usage Notes
    2. 4.2 Silicon Revision A Advisories
      1.      Advisory
      2.      Advisory
      3.      Advisory
      4.      Advisory
      5.      Advisory
      6.      Advisory
  7. 5Silicon Revision 0 Usage Notes and Advisories
    1. 5.1 Silicon Revision 0 Usage Notes
    2. 5.2 Silicon Revision 0 Advisories
      1.      Advisory
      2.      Advisory
      3.      Advisory
  8. 6Documentation Support
  9. 7Trademarks
  10. 8Revision History

Advisory

VDD Supply: During VDDIO Power Up, VDD May Also Rise

Revisions Affected

0, A, B

Details

A leakage current from VDDIO to VDD is present when the VDD supply is below approximately 0.5 V. This causes the VDD voltage to rise to approximately 0.5 V when VDDIO is powered. This is observed when the device is configured to use either the internal VREG (VREGENZ tied to VSS) or an external 1.2-V regulator (VREGENZ tied to VDDIO), and there is a significant delay (about 1 ms) between the power up of VDDIO and VDD from external regulators or the ramp time of VDDIO is greater than 1 ms when in internal VREG mode.

This does not impact device functionality once the external 1.2-V or internal 1.2-V supply begins to ramp. See the TMS320F28004x Real-Time Microcontrollers data sheet for power sequencing requirements.

Workaround

If this early voltage on VDD is a problem for system-level supervisor circuits, then minimize the delay between ramping the 3.3-V VDDIO and 1.2-V VDD rails. If the internal VREG is used, decrease the ramp time of the 3.3-V VDDIO supply to 1 ms or less.