SWCU185G January 2018 – June 2024 CC1312PSIP , CC1312R , CC1352P , CC1352R , CC2642R , CC2642R-Q1 , CC2652P , CC2652PSIP , CC2652R , CC2652RB , CC2652RSIP , CC2662R-Q1
The CC13x2 and CC26x2 device platform provides 80 kB of low-leakage, on-chip SRAM with optional retention in all power modes. Retention can be configured per 16 kB block. Additionally, the 8 kB flash cache RAM can be reconfigured to operate as normal system RAM. Because read-modify-write (RMW) operations are very time consuming, Arm® has introduced bit-banding technology in the Arm® Cortex®-M4F processor. With a bit-band-enabled processor, certain regions in the memory map (SRAM and peripheral space) can use address aliases to access individual bits in a single, atomic operation.
Data can be transferred to and from the SRAM using the micro DMA (µDMA) controller.