米6体育平台手机版

ZHCS453D August 2011 – April 2021 TPS53353

PRODUCTION DATA

6.5 Electrical Characteristics

Over recommended free-air temperature range, V_VDD= 12 V (unless otherwise noted)

PARAMETER		CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
V_VIN	VIN pin power conversion input voltage		1.5		15	V
V_VDD	Supply input voltage		4.5		25	V
I_VIN(leak)	VIN pin leakage current	V_EN = 0 V			1	µA
I_VDD	VDD supply current	T_A = 25°C, No load, V_EN = 5 V, V_VFB = 0.630 V		420	590	µA
I_VDDSDN	VDD shutdown current	T_A = 25°C, No load, V_EN = 0 V			10	µA
INTERNAL REFERENCE VOLTAGE
V_VFB	VFB regulation voltage	CCM condition⁽¹⁾		0.6		V
V_VFB	VFB regulation voltage	T_A = 25°C	0.597	0.6	0.603	V
		0°C ≤ T_A ≤ 85°C	0.5952	0.6	0.6048
		–40°C ≤ T_A ≤ 85°C	0.594	0.6	0.606
I_VFB	VFB input current	V_VFB = 0.630 V, T_A = 25°C		0.01	0.2	µA
LDO OUTPUT
V_VREG	LDO output voltage	0 mA ≤ I_VREG ≤ 30 mA	4.77	5	5.36	V
I_VREG	LDO output current⁽¹⁾	Maximum current allowed from LDO			30	mA
V_DO	Low drop out voltage	V_VDD = 4.5 V, I_VREG = 30 mA			230	mV
BOOT STRAP SWITCH
V_FBST	Forward voltage	V_VREG-VBST, I_F = 10 mA, T_A = 25°C		0.1	0.2	V
I_VBSTLK	VBST leakage current	V_VBST = 23 V, V_SW = 17 V, T_A = 25°C		0.01	1.5	µA
DUTY AND FREQUENCY CONTROL
t_OFF(min)	Minimum off time	T_A = 25°C	150	260	400	ns
t_ON(min)	Minimum on time	V_IN = 17 V, V_OUT = 0.6 V, R_RF = 39 kΩ, T_A = 25 °C⁽¹⁾		35		ns
SOFT START
t_SS	Internal soft-start time from V_OUT = 0 V to 95% of V_OUT	R_MODE = 39 kΩ		0.7		ms
		R_MODE = 100 kΩ		1.4
		R_MODE = 200 kΩ		2.8
		R_MODE = 470 kΩ		5.6
INTERNAL MOSFETs
R_DS(on)H	High-side MOSFET on-resistance	T_A = 25 °C		5.5		mΩ
R_DS(on)L	Low-side MOSFET on-resistance	T_A = 25 °C		2.2		mΩ
POWERGOOD
V_THPG	PG threshold	PG in from lower	92.5%	95%	98.5%
		PG in from higher	107.5%	110%	112.5%
		PG hysteresis	2.5%	5%	7.5%
R_PG	PG transistor on-resistance		15	30	55	Ω
t_PGDEL	PG delay	Delay for PG in	0.8	1	1.2	ms
LOGIC THRESHOLD AND SETTING CONDITIONS
V_EN	EN Voltage	Enable	1.8			V
V_EN	EN Voltage	Disable			0.6	V
I_EN	EN Input current	V_EN = 5 V			1	µA
f_SW	Switching frequency	R_RF = 0 Ω to GND, T_A = 25°C⁽²⁾	200	250	300	kHz
		R_RF = 187 kΩ to GND, T_A = 25°C⁽²⁾	250	300	350
		R_RF = 619 kΩ, to GND, T_A = 25°C⁽²⁾	350	400	450
		R_RF = Open, T_A= 25°C⁽²⁾	450	500	550
		R_RF = 866 kΩ to VREG, T_A = 25°C⁽²⁾	580	650	720
		R_RF = 309 kΩ to VREG, T_A = 25°C⁽²⁾	670	750	820
		R_RF = 124 kΩ to VREG, T_A = 25°C⁽²⁾	770	850	930
		R_RF = 0 Ω to VREG, T_A = 25°C⁽²⁾	880	970	1070
PROTECTION: CURRENT SENSE
I_TRIP	TRIP source current	V_TRIP = 1 V, T_A = 25°C	9.4	10	10.6	µA
TC_ITRIP	TRIP current temperature coeffficient	On the basis of 25°C⁽¹⁾		4700		ppm/°C
V_TRIP	Current limit threshold setting range	V_TRIP-GND	0.4		1.2	V
V_OCL	Current limit threshold	V_TRIP = 1.2 V	32	37.5	43	mV
V_OCL	Current limit threshold	V_TRIP = 0.4	7.5	12.5	17.5	mV
V_OCLN	Negative current limit threshold	V_TRIP = 1.2 V	–160	–150	–140	mV
V_OCLN	Negative current limit threshold	V_TRIP = 0.4 V	–58	–50	–42	mV
V_AZCADJ	Auto zero cross adjustable range	Positive	3	15		mV
V_AZCADJ	Auto zero cross adjustable range	Negative		–15	–3	mV
PROTECTION: UVP and OVP
V_OVP	OVP trip threshold	OVP detect	115%	120%	125%
t_OVPDEL	OVP proprogation delay	VFB delay with 50-mV overdrive		1		µs
V_UVP	Output UVP trip threshold	UVP detect	65%	70%	75%
t_UVPDEL	Output UVP proprogation delay		0.8	1	1.2	ms
t_UVPEN	Output UVP enable delay	From enable to UVP workable	1.8	2.6	3.2	ms
UVLO
V_UVVREG	VREG UVLO threshold	Wake up	4	4.2	4.33	V
V_UVVREG	VREG UVLO threshold	Hysteresis		0.25		V
THERMAL SHUTDOWN
T_SDN	Thermal shutdown threshold	Shutdown temperature⁽¹⁾		145		°C
T_SDN	Thermal shutdown threshold	Hysteresis⁽¹⁾		10		°C

(1) Ensured by design. Not production tested.

(2) Not production tested. Test condition is V_IN= 12 V, V_OUT= 1.1 V, I_OUT = 10 A using application circuit shown in Figure 8-1.