7.1 Overview

The UCC27611 is a single-channel, high-speed, gate driver capable of effectively driving MOSFET power switches (specifically addressing enhancement mode GaN FETs) by up to 4-A source and 6-A sink peak current. Strong sink capability in asymmetrical drive boosts immunity against parasitic Miller turnon effect. The drive voltage VREF is precisely regulated by internal linear regulator to 5 V, which is optimized for driving enhancement mode GaN FET. The input threshold of UCC27611 is based on TTL and CMOS compatible low-voltage logic, which is fixed and independent of VDD supply voltage. The 0.95-V typical hysteresis offers excellent noise immunity. For safety reason, when the input pins are in a floating condition, the internal input pullup and pulldown resistors hold the output LOW. The device also features a split-output configuration, where the gate-drive current is sourced through the OUTH pin and sunk through the OUTL pin. This pin arrangement allows the user to apply independent turnon and turnoff resistors to the OUTH and OUTL pins, respectively, and easily control the switching slew rates. The driver has rail-to-rail drive capability and extremely small propagation delay, with minimized tolerances and variations. Package and pinout with minimum parasitic inductances reduce the rise and fall time, and limit the ringing allows efficient operation at high frequencies.