ZHCSAU4D December   2012  – April 2015 CC2538

PRODUCTION DATA.  

  1. 1器件概述
    1. 1.1 特性
    2. 1.2 应用
    3. 1.3 说明
    4. 1.4 功能方框图
  2. 2修订历史记录
  3. 3Device Comparison
  4. 4Terminal Configuration and Functions
    1. 4.1 Signal Descriptions
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Electrical Characteristics
    5. 5.5  General Characteristics
    6. 5.6  RF Receive Section
    7. 5.7  RF Transmit Section
    8. 5.8  32-MHz Crystal Oscillator
    9. 5.9  32.768-kHz Crystal Oscillator
    10. 5.10 32-kHz RC Oscillator
    11. 5.11 16-MHz RC Oscillator
    12. 5.12 RSSI/CCA Characteristics
    13. 5.13 FREQEST Characteristics
    14. 5.14 Frequency Synthesizer Characteristics
    15. 5.15 Analog Temperature Sensor
    16. 5.16 ADC Characteristics
    17. 5.17 Control Input AC Characteristics
    18. 5.18 DC Characteristics
    19. 5.19 USB Interface DC Characteristics
    20. 5.20 Thermal Resistance Characteristics for RTQ Package
  6. 6Applications, Implementation, and Layout
    1. 6.1 Input, Output Matching
    2. 6.2 Crystal
    3. 6.3 On-Chip 1.8-V Voltage-Regulator Decoupling
    4. 6.4 Power-Supply Decoupling and Filtering
    5. 6.5 References
  7. 7器件和文档支持
    1. 7.1 器件支持
      1. 7.1.1 开发支持
      2. 7.1.2 器件命名规则
    2. 7.2 文档支持
      1. 7.2.1 社区资源
    3. 7.3 其他信息
      1. 7.3.1 米6体育平台手机版_好二三四 (TI) 低功耗射频网站
      2. 7.3.2 低功耗射频在线社区
      3. 7.3.3 米6体育平台手机版_好二三四 (TI) 低功耗射频开发者网络
      4. 7.3.4 低功耗射频电子新闻简报
    4. 7.4 商标
    5. 7.5 静电放电警告
    6. 7.6 出口管制提示
    7. 7.7 Glossary
  8. 8机械、封装和可订购信息
    1. 8.1 封装信息

5 Specifications

5.1 Absolute Maximum Ratings(1)(2)(3)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage All supply pins must have the same voltage –0.3 3.9 V
Voltage on any digital pin –0.3 VDD + 0.3, ≤ 3.9 V
Input RF level 10 dBm
Tstg Storage temperature range –40 125 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.
(3) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

5.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge (ESD) performance: Human body model (HBM), per ANSI/ESDA/JEDEC JS001(1) ±1 kV
Charged device model (CDM),
per JESD22-C101(2)		 All pins ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Operating ambient temperature range, TA –40 125 °C
Operating supply voltage (1) 2 3.6 V
(1) The CC2538 contains a power on reset (POR) module and a brown out detector (BOD) that prevent the device from operating under unsafe supply voltage conditions. In the two lowest power modes, PM2 and PM3, the POR is active but the BOD is powered down, which gives a limited voltage supervision.
If the supply voltage is lowered to below 1.4 V during PM2/PM3, at temperatures of 70°C or higher, and then brought back up to good operating voltage before active mode is re-entered, registers and RAM contents that are saved in PM2, PM3 may become altered. Hence, care should be taken in the design of the system power supply to ensure that this does not occur. The voltage can be periodically supervised accurately by entering active mode, as a BOD reset is triggered if the supply voltage is below approximately
1.7 V.

5.4 Electrical Characteristics

Measured on TI's CC2538 EM reference design with TA = 25°C, VDD = 3 V, and 8-MHz system clock, unless otherwise noted.
Boldface limits apply over the entire operating range, TA = –40°C to 125°C, VDD = 2 V to 3.6 V, and fc = 2394 MHz to 2507 MHz.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Icore Core current consumption Digital regulator on. 16-MHz RCOSC running. No radio, crystals, or peripherals active.
CPU running at 16-MHz with flash access		 7 mA
32-MHz XOSC running. No radio or peripherals active.
CPU running at 32-MHz with flash access,.		 13 mA
32-MHz XOSC running, radio in RX mode, –50-dBm input power, no peripherals active, CPU idle 20 mA
32-MHz XOSC running, radio in RX mode at –100-dBm input power (waiting for signal), no peripherals active, CPU idle 24 27 mA
32-MHz XOSC running, radio in TX mode, 0-dBm output power, no peripherals active, CPU idle 24 mA
32-MHz XOSC running, radio in TX mode, 7-dBm output power, no peripherals active, CPU idle 34 mA
Power mode 1. Digital regulator on; 16-MHz RCOSC and
32-MHz crystal oscillator off; 32.768-kHz XOSC, POR, BOD and sleep timer active; RAM and register retention		 0.6 mA
Power mode 2. Digital regulator off; 16-MHz RCOSC and
32-MHz crystal oscillator off; 32.768-kHz XOSC, POR, and sleep timer active; RAM and register retention 		1.3 2 µA
Power mode 3. Digital regulator off; no clocks; POR active; RAM and register retention 0.4 1 µA
Iperi Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated)
General-purpose timer Timer running, 32-MHz XOSC used 120 µA
SPI 300 µA
I2C 0.1 mA
UART 0.7 mA
Sleep timer Including 32.753-kHz RCOSC 0.9 µA
USB 48-MHz clock running, USB enabled 3.8 mA
ADC When converting 1.2 mA
Flash Erase 12 mA
Burst-write peak current 8 mA

5.5 General Characteristics

Measured on TI's CC2538 EM reference design with TA = 25 °C and VDD = 3 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Wake-Up and Timing
Power mode 1 → active Digital regulator on, 16-MHz RCOSC and 32-MHz crystal oscillator off. Start-up of 16-MHz RCOSC 4 µs
Power mode 2 or 3 → active Digital regulator off, 16-MHz RCOSC and 32-MHz crystal oscillator off. Start-up of regulator and 16-MHz RCOSC 136 µs
Active → TX or RX Initially running on 16-MHz RCOSC, with 32-MHz XOSC off 0.5 ms
With 32-MHz XOSC initially on 192 µs
RX/TX and TX/RX turnaround 192 µs
USB PLL start-up time With 32-MHz XOSC initially on 32 µs
Radio Part
RF frequency range Programmable in 1-MHz steps, 5 MHz between channels for compliance with (1) 2394 2507 MHz
Radio baud rate As defined by (1) 250 kbps
Radio chip rate As defined by (1) 2 MChip/s
Flash Memory
Flash erase cycles 20 k Cycles
Flash page size 2 KB
(1) IEEE Std. 802.15.4-2006: Wireless Medium Access Control (MAC) and Physical Layer (PHY) Specifications for Low-Rate Wireless Personal Area Networks (LR-WPANs)
http://standards.ieee.org/getieee802/download/802.15.4-2006.pdf

5.6 RF Receive Section

Measured on TI's CC2538 EM reference design with TA = 25°C, VDD = 3 V, and fc = 2440 MHz, unless otherwise noted.
Bold limits apply over the entire operating range, TA = –40°C to 125°C, VDD = 2 V to 3.6 V, and fc = 2394 MHz to 2507 MHz.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity PER = 1%, as specified by (1), normal operating conditions
(25 °C, 3 V, 2440 MHz)
(1) requires –85 dBm		 –97 –92 dBm
PER = 1%, as specified by (1), entire operating conditions
(1) requires –85 dBm		 –88 dBm
Saturation (maximum input level) PER = 1%, as specified by (1)
(1) requires –20 dBm		 10 dBm
Adjacent-channel rejection,
5-MHz channel spacing		 Wanted signal –82 dBm, adjacent modulated channel at 5 MHz, PER = 1%, as specified by (1).
(1) requires 0 dB		 44 dB
Adjacent-channel rejection,
–5-MHz channel spacing		 Wanted signal –82 dBm, adjacent modulated channel at –5 MHz, PER = 1%, as specified by (1).
(1) requires 0 dB		 44 dB
Alternate-channel rejection,
10-MHz channel spacing		 Wanted signal –82 dBm, adjacent modulated channel at 10 MHz, PER = 1%, as specified by (1)
(1) requires 30 dB		 52 dB
Alternate-channel rejection,
–10-MHz channel spacing		 Wanted signal –82 dBm, adjacent modulated channel at –10 MHz, PER = 1%, as specified by (1)
(1) requires 30 dB		 52 dB
Channel rejection Wanted signal at –82 dBm. Undesired signal is an IEEE 802.15.4 modulated channel, stepped through all channels from 2405 to 2480 MHz. Signal level for PER = 1%.   dB
≥ 20 MHzXXXXX
≤ –20 MHzXXXXX		 51
51
Blocking/desensitization dBm
5 MHz from band edgeXXXXX
10 MHz from band edgeXXXXX
20 MHz from band edgeXXXXX
50 MHz from band edgeXXXXX
–5 MHz from band edgeXXXXX
–10 MHz from band edgeXXXXX
–20 MHz from band edgeXXXXX
–50 MHz from band edgeXXXXX		 Wanted signal 3 dB above the sensitivity level, CW jammer,
PER = 1%. Measured according to EN 300 440 class 2.		 –35
–34
–37
–32
–37
–38
–35
–34
Spurious emission. Only largest spurious emission stated within each band. Conducted measurement with a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440, FCC CFR47 Part 15, and ARIB STD-T-66. dBm
30 MHz–1000 MHzXXXXX
1 GHz–12.75 GHzXXXXX		 –80
–80
Frequency error tolerance(2) (1) requires minimum 80 ppm ±150 ppm
Symbol rate error tolerance(3) (1) requires minimum 80 ppm ±1000 ppm
(1) IEEE Std. 802.15.4-2006: Wireless Medium Access Control (MAC) and Physical Layer (PHY) Specifications for Low-Rate Wireless Personal Area Networks (LR-WPANs)
http://standards.ieee.org/getieee802/download/802.15.4-2006.pdf
(2) Difference between center frequency of the received RF signal and local oscillator frequency
(3) Difference between incoming symbol rate and the internally generated symbol rate

5.7 RF Transmit Section

Measured on TI's CC2538 EM reference design with TA = 25°C, VDD = 3 V and fc = 2440 MHz, unless otherwise noted.
Boldface limits apply over the entire operating range, TA = –40°C to 125°C, VDD = 2 V to 3.6 V, and fc = 2394 MHz to 2507 MHz.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Nominal output power Delivered to a single-ended 50-Ω load through a balun using maximum-recommended output-power setting
(1) requires minimum –3 dBm		 7 dBm
Programmable output-power range 30 dB
Spurious emissions Maximum recommended output power setting(2)
Measured according to stated regulations.
Only largest spurious emission stated within each band. 25–1000 MHz (outside restricted bands)
25–1000 MHz (within FCC restricted bands)
25–1000 MHz (within ETSI restricted bands)
1800–1900 MHz (ETSI restricted band)
5150–5300 MHz (ETSI restricted band)
1–12.75 GHz (except restricted bands)
At 2483.5 MHz and above (FCC restricted band),  fc= 2480 MHz(3) 		–56
–58
–58
–60
–54
–51
  –42		 dBm
Error vector magnitude (EVM) Measured as defined by (1) using maximum-recommended output-power setting
(1) requires maximum 35%.		 3%
Optimum load impedance Differential impedance on the RF pins 66 + j64 Ω
(1) IEEE Std. 802.15.4-2006: Wireless Medium Access Control (MAC) and Physical Layer (PHY) Specifications for Low-Rate Wireless Personal Area Networks (LR-WPANs)
http://standards.ieee.org/getieee802/download/802.15.4-2006.pdf
(2) TI's CC2538 EM reference design is suitable for systems targeting compliance with EN 300 328, EN 300 440, FCC CFR47 Part 15, and ARIB STD-T-66.
(3) To improve margins for passing FCC requirements at 2483.5 MHz and above when transmitting at 2480 MHz, use a lower output-power setting or less than 100% duty cycle.

5.8 32-MHz Crystal Oscillator

Measured on TI's CC2538 EM reference design with TA = 25°C and VDD = 3 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency 32 MHz
Crystal frequency accuracy requirement(1) –40 40 ppm
ESR Equivalent series resistance 6 16 60 Ω
C0 Crystal shunt capacitance 1 1.9 7 pF
CL Crystal load capacitance 10 13 16 pF
Start-up time 0.3 ms
Power-down guard time The crystal oscillator must be in power down for a guard time before using it again. This requirement is valid for all modes of operation. The need for power-down guard time can vary with crystal type and load. 3 ms
(1) Including aging and temperature dependency, as specified by IEEE Std. 802.15.4-2006: Wireless Medium Access Control (MAC) and Physical Layer (PHY) Specifications for Low-Rate Wireless Personal Area Networks (LR-WPANs)
http://standards.ieee.org/getieee802/download/802.15.4-2006.pdf

5.9 32.768-kHz Crystal Oscillator

Measured on TI's CC2538 EM reference design with TA = 25°C and VDD = 3 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency 32.768 kHz
Crystal frequency accuracy requirement(1) –40 40 ppm
ESR Equivalent series resistance 40 130 Ω
C0 Crystal shunt capacitance 0.9 2 pF
CL Crystal load capacitance 12 16 pF
Start-up time 0.4 s
(1) Including aging and temperature dependency, as specified by IEEE Std. 802.15.4-2006: Wireless Medium Access Control (MAC) and Physical Layer (PHY) Specifications for Low-Rate Wireless Personal Area Networks (LR-WPANs)
http://standards.ieee.org/getieee802/download/802.15.4-2006.pdf

5.10 32-kHz RC Oscillator

Measured on TI's CC2538 EM reference design with TA = 25°C and VDD = 3 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Calibrated frequency(1) 32.753 kHz
Frequency accuracy after calibration ±0.2%
Temperature coefficient(2) 0.4 %/ °C
Supply-voltage coefficient(3) 3 %/V
Calibration time(4) 2 ms
(1) The calibrated 32-kHz RC oscillator frequency is the 32-MHz XTAL frequency divided by 977.
(2) Frequency drift when temperature changes after calibration
(3) Frequency drift when supply voltage changes after calibration
(4) When the 32-kHz RC oscillator is enabled, it is calibrated when a switch from the 16-MHz RC oscillator to the 32-MHz crystal oscillator is performed while SLEEPCMD.OSC32K_CALDIS is 0.

5.11 16-MHz RC Oscillator

Measured on TI's CC2538 EM reference design with TA = 25°C and VDD = 3 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Frequency(1) 16 MHz
Uncalibrated frequency accuracy ±18%
Calibrated frequency accuracy ±0.6% ±1%
Start-up time 10 µs
Initial calibration time(2) 50 µs
(1) The calibrated 16-MHz RC oscillator frequency is the 32-MHz xtal frequency divided by 2.
(2) When the 16-MHz RC oscillator is enabled, it is calibrated when a switch from the 16-MHz RC oscillator to the 32-MHz crystal oscillator is performed while SLEEPCMD.OSC_PD is set to 0.

5.12 RSSI/CCA Characteristics

Measured on TI's CC2538 EM reference design with TA = 25°C and VDD = 3 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RSSI range 100 dB
Absolute uncalibrated RSSI/CCA accuracy ±4 dB
RSSI/CCA offset(1) 73 dB
Step size (LSB value) 1 dB
(1) Real RSSI = Register value – offset

5.13 FREQEST Characteristics

Measured on TI's CC2538 EM reference design with TA = 25°C and VDD = 3 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
FREQEST range ±250 kHz
FREQEST accuracy ±10 kHz
FREQEST offset(1) 15 kHz
Step size (LSB value) 7.8 kHz
(1) Real FREQEST = Register value – offset

5.14 Frequency Synthesizer Characteristics

Measured on TI's CC2538 EM reference design with TA = 25°C, VDD = 3 V and fc = 2440 MHz, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Phase noise, unmodulated carrier At ±1-MHz offset from carrier –111 dBc/Hz
At ±2-MHz offset from carrier –119
At ±5-MHz offset from carrier –126

5.15 Analog Temperature Sensor

Measured on TI's CC2538 EM reference design with TA = 25°C and VDD = 3 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output at 25°C Measured using integrated ADC, using internal band-gap voltage reference and maximum resolution 1422 12-bit ADC
Temperature coefficient 4.2 /1°C
Voltage coefficient 1 /0.1 V
Initial accuracy without calibration ±10 °C
Accuracy using 1-point calibration (entire temperature range) ±5 °C
Current consumption when enabled (ADC current not included) 0.3 mA

5.16 ADC Characteristics

TA = 25°C and VDD = 3 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage VDD is voltage on AVDD5 pin 0 VDD V
External reference voltage VDD is voltage on AVDD5 pin 0 VDD V
External reference voltage differential VDD is voltage on AVDD5 pin 0 VDD V
Input resistance, signal Using 4-MHz clock speed 197 kΩ
Full-scale signal(1) Peak-to-peak, defines 0 dBFS 2.97 V
ENOB(1) Effective number of bits Single-ended input, 7-bit setting 5.7 Bits
Single-ended input, 9-bit setting 7.5
Single-ended input, 10-bit setting 9.3
Single-ended input, 12-bit setting 10.8
Differential input, 7-bit setting 6.5
Differential input, 9-bit setting 8.3
Differential input, 10-bit setting 10.0
Differential input, 12-bit setting 11.5
Useful power bandwidth 7-bit setting, both single and differential 0–20 kHz
THD(1) Total harmonic distortion Single-ended input, 12-bit setting, –6 dBFS –75.2 dB
Differential input, 12-bit setting, –6 dBFS –86.6
Signal to nonharmonic ratio(1) Single-ended input, 12-bit setting 70.2 dB
Differential input, 12-bit setting 79.3
Single-ended input, 12-bit setting, –6 dBFS 78.8
Differential input, 12-bit setting, –6 dBFS 88.9
CMRR Common-mode rejection ratio Differential input, 12-bit setting, 1-kHz sine (0 dBFS), limited by ADC resolution >84 dB
Crosstalk Single-ended input, 12-bit setting, 1-kHz sine (0 dBFS), limited by ADC resolution < –84 dB
Offset Midscale –3 mV
Gain error 0.68%
DNL(1) Differential nonlinearity 12-bit setting, mean 0.05 LSB
12-bit setting, maximum 0.9
INL(1) Integral nonlinearity 12-bit setting, mean 4.6 LSB
12-bit setting, maximum 13.3
SINAD(1)
(–THD+N) 		Signal-to-noise-and-distortion Single-ended input, 7-bit setting 35.4 dB
Single-ended input, 9-bit setting 46.8
Single-ended input, 10-bit setting 57.5
Single-ended input, 12-bit setting 66.6
Differential input, 7-bit setting 40.7
Differential input, 9-bit setting 51.6
Differential input, 10-bit setting 61.8
Differential input, 12-bit setting 70.8
Conversion time 7-bit setting 20 µs
9-bit setting 36
10-bit setting 68
12-bit setting 132
Current consumption 1.2 mA
Internal reference voltage 1.19 V
Internal reference VDD coefficient 2 mV/V
Internal reference temperature coefficient 0.4 mV/10 °C
(1) Measured with 300-Hz sine-wave input and VDD as reference

5.17 Control Input AC Characteristics

TA = –40°C to 125°C, VDD = 2 V to 3.6 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
System clock, fSYSCLK
tSYSCLK = 1/fSYSCLK 		The undivided system clock is 32 MHz when crystal oscillator is used. The undivided system clock is 16 MHz when calibrated 16-MHz RC oscillator is used. 16 32 MHz
RESET_N low duration(1) See item 1, Figure 5-1. This is the shortest pulse that is recognized as a complete reset pin request. 1 µs
Interrupt pulse duration See item 2, Figure 5-1.This is the shortest pulse that is recognized as an interrupt request. 20 ns
(1) Shorter pulses may be recognized, but might not lead to a complete reset of all modules within the chip.
CC2538 T0299-01_WRS075.gif Figure 5-1 Control Input AC Characteristics

5.18 DC Characteristics

TA = 25°C, VDD = 3 V, drive strength set to high with CC_TESTCTRL.SC = 1, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Logic-0 input voltage 0.5 V
Logic-1 input voltage 2.5 V
Logic-0 input current Input equals 0 V –300 300 nA
Logic-1 input current Input equals VDD –300 300 nA
I/O-pin pullup and pulldown resistors 20 kΩ
Logic-0 output voltage, 4-mA pins Output load 4 mA 0.5 V
Logic-1 output voltage, 4-mA pins Output load 4 mA 2.4 V
Logic-0 output voltage, 20-mA pins Output load 20 mA 0.5 V
Logic-1 output voltage, 20-mA pins Output load 20 mA 2.4 V

5.19 USB Interface DC Characteristics

TA = 25°C, VDD = 3 V to 3.6 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
USB pad voltage output, high VDD 3.6 V, 4-mA load 3.4 V
USB pad voltage output, low VDD 3.6 V, 4-mA load 0.2 V

5.20 Thermal Resistance Characteristics for RTQ Package

NAME DESCRIPTION °C/W(1)(2) AIR FLOW (m/s)(3)
RθJC-top Junction-to-case (top) 8.9 0.00
RθJB Junction-to-board 3.1 0.00
RθJA Junction-to-free air 25.0 0.00
PsiJT Junction-to-package top 3.1 0.00
PsiJB-bottom Junction-to-board (bottom) 0.4 0.00
(1) °C/W = degrees Celsius per watt.
(2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RθJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:
  • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
  • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
(3) m/s = meters per second.
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