米6体育平台手机版

ZHCSBA7B June 2013 – July 2014 CSD18537NQ5A

PRODUCTION DATA.

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	60			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 48 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	2.6	3	3.5	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = 6 V, I_D = 12 A		13	17	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10 V, I_D = 12 A		10	13	mΩ
g_ƒs	Transconductance	V_DS = 30 V, I_D = 12 A		62		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 30 V, ƒ = 1 MHz		1140	1480	pF
C_oss	Output Capacitance			136	177	pF
C_rss	Reverse Transfer Capacitance			4	5.2	pF
R_G	Series Gate Resistance			5.5	11	Ω
Q_g	Gate Charge Total (10 V)	V_DS = 30 V, I_D = 12 A		14	18	nC
Q_gd	Gate Charge Gate-to-Drain			2.3		nC
Q_gs	Gate Charge Gate-to-Source			4.7		nC
Q_g(th)	Gate Charge at V_th			3.3		nC
Q_oss	Output Charge	V_DS = 30 V, V_GS = 0 V		25		nC
t_d(on)	Turn On Delay Time	V_DS = 30 V, V_GS = 10 V, I_DS = 12 A, R_G = 0 Ω		5.8		ns
t_r	Rise Time			4		ns
t_d(off)	Turn Off Delay Time			14.4		ns
t_ƒ	Fall Time			3.2		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 12 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DS= 30 V, I_F = 12 A, di/dt = 300 A/μs		54		nC
t_rr	Reverse Recovery Time	V_DS= 30 V, I_F = 12 A, di/dt = 300 A/μs		40		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance ⁽¹⁾			2.1	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance ⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.