ZHCSCE8F April   2014  – May 2019 TPD1S514

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      TPD1S514 系列电路保护方案
      2.      TPD1S514 系列方框图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Consumption
    6. 7.6  Electrical Characteristics EN Pin
    7. 7.7  Thermal Shutdown Feature
    8. 7.8  Electrical Characteristics nFET Switch
    9. 7.9  Electrical Characteristics OVP Circuit
    10. 7.10 Electrical Characteristics VBUS_POWER Circuit
    11. 7.11 Timing Requirements
    12. 7.12 TPD1S514-1 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Over Voltage Protection on VBUS_CON up to 30 V DC
      2. 8.3.2  Precision OVP (< ±1% Tolerance)
      3. 8.3.3  Low RON nFET Switch Supports Host and Charging Mode
      4. 8.3.4  VBUS_POWER, TPD1S514-1, TPD1S514-2, TPD1S514-3
      5. 8.3.5  VBUS_POWER, TPD1S514
      6. 8.3.6  Powering the System When Battery is Discharged
      7. 8.3.7  ±15 kV IEC 61000-4-2 Level 4 ESD Protection
      8. 8.3.8  100 V IEC 61000-4-5 µs Surge Protection
      9. 8.3.9  Startup and OVP Recovery Delay
      10. 8.3.10 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VBUS_CON < 3.5 V (Minimum VBUS_CON)
      2. 8.4.2 Operation With VBUS_CON > VOVP
      3. 8.4.3 OTG Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TPD1S514-1 USB 2.0/3.0 Case 1: Always Enabled
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 VBUS Voltage Range
          2. 9.2.1.2.2 Discharged Battery
        3. 9.2.1.3 Application Curves
      2. 9.2.2 TPD1S514-1 USB 2.0/3.0 Case 2: PMIC Controlled EN
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 VBUS Voltage Range
          2. 9.2.2.2.2 PMIC Power Requirement
          3. 9.2.2.2.3 Discharged Battery
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 社区资源
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 Glossary
  13. 13机械、封装和可订购信息

7.10 Electrical Characteristics VBUS_POWER Circuit

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCLAMP Output voltage on VBUS_POWER during OVP VBUS_CON = 20 V TPD1S514-1 5.0 5.5 V
TPD1S514-2 5.0 5.5
TPD1S514-3 5.0 5.5
TPD1S514 6.48 6.68
VBUS_POWER Output voltage on VBUS_POWER during normal operation VBUS_CON = 5 V,
IBUS_POWER = 1 mA; 		TPD1S514-1 4.7 4.95 V
TPD1S514-2 4.7 4.95
TPD1S514-3 4.7 4.95
TPD1S514 4.7 4.98
IBUS_POWER_MAX Output current on VBUS_POWER VBUS_CON = 5 V – 15 V 3 mA
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |