ZHCSCE8F April   2014  – May 2019 TPD1S514

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      TPD1S514 系列电路保护方案
      2.      TPD1S514 系列方框图
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Consumption
    6. 7.6  Electrical Characteristics EN Pin
    7. 7.7  Thermal Shutdown Feature
    8. 7.8  Electrical Characteristics nFET Switch
    9. 7.9  Electrical Characteristics OVP Circuit
    10. 7.10 Electrical Characteristics VBUS_POWER Circuit
    11. 7.11 Timing Requirements
    12. 7.12 TPD1S514-1 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Over Voltage Protection on VBUS_CON up to 30 V DC
      2. 8.3.2  Precision OVP (< ±1% Tolerance)
      3. 8.3.3  Low RON nFET Switch Supports Host and Charging Mode
      4. 8.3.4  VBUS_POWER, TPD1S514-1, TPD1S514-2, TPD1S514-3
      5. 8.3.5  VBUS_POWER, TPD1S514
      6. 8.3.6  Powering the System When Battery is Discharged
      7. 8.3.7  ±15 kV IEC 61000-4-2 Level 4 ESD Protection
      8. 8.3.8  100 V IEC 61000-4-5 µs Surge Protection
      9. 8.3.9  Startup and OVP Recovery Delay
      10. 8.3.10 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VBUS_CON < 3.5 V (Minimum VBUS_CON)
      2. 8.4.2 Operation With VBUS_CON > VOVP
      3. 8.4.3 OTG Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TPD1S514-1 USB 2.0/3.0 Case 1: Always Enabled
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 VBUS Voltage Range
          2. 9.2.1.2.2 Discharged Battery
        3. 9.2.1.3 Application Curves
      2. 9.2.2 TPD1S514-1 USB 2.0/3.0 Case 2: PMIC Controlled EN
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 VBUS Voltage Range
          2. 9.2.2.2.2 PMIC Power Requirement
          3. 9.2.2.2.3 Discharged Battery
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 社区资源
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 Glossary
  13. 13机械、封装和可订购信息

Overview

The TPD1S514 Family provides single-chip ESD, surge, and over voltage protection solutions for portable USB Charging and Host interfaces. Each device offers over voltage protection at the VBUS_CON pin up to 30-V DC. The TPD1S514 Family offers an ESD and Precision Clamp for the VBUS_CON pin, thus eliminating the need for external TVS clamp circuits in the application.

Each device has an internal oscillator and charge pump which controls turning ON the internal nFET switch. The internal oscillator controls the timers which enable the charge pump. If VBUS_CON is less than VOVP, the internal charge pump is enabled. After a 20 ms internal delay, the charge-pump starts-up, and turns ON the internal nFET switch through a soft start. If at any time VBUS_CON rises above VOVP, the nFET switch is turned OFF within 100 ns.

The TPD1S514 Family of devices also have a VBUS_POWER pin which follows VBUS_CON up to 4.9 V at 3 mA (except for TPD1S514, which follows VBUS_CON up to 6.48 V, after which it is regulated to that voltage) to power the system from VBUS_CON. In the case where the system battery state cannot power the system, voltage from an external charger can be provided to power the system. VBUS_POWER is supplied by an always on LDO regulator supplied by VBUS_CON. VBUS_POWER output voltage remains regulated to 4.9 V (except for TPD1S514, which follows VBUS_CON up to 6.48 V, after which it is regulated to that voltage) at up to 30-V DC on VBUS_CON and during IEC 61000-4-5 surge events of up to 100 V open circuit voltage on VBUS_CON.