ZHCSCH4H June   2013  – November 2016 TPS65132 , TPS65132S

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5  Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 I2C Interface Timing Requirements / Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Active Discharge
      3. 8.3.3 Boost Converter
        1. 8.3.3.1 Boost Converter Operation
        2. 8.3.3.2 Power-Up And Soft-Start (Boost Converter)
        3. 8.3.3.3 Power-Down (Boost Converter)
        4. 8.3.3.4 Isolation (Boost Converter)
        5. 8.3.3.5 Output Voltage (Boost Converter)
        6. 8.3.3.6 Advanced Power-Save Mode For Light-Load Efficiency And PFM
      4. 8.3.4 LDO Regulator
        1. 8.3.4.1 LDO Operation
        2. 8.3.4.2 Power-Up And Soft-Start (LDO)
        3. 8.3.4.3 Power-Down And Discharge (LDO)
        4. 8.3.4.4 Isolation (LDO)
        5. 8.3.4.5 Setting The Output Voltage (LDO)
      5. 8.3.5 Negative Charge Pump
        1. 8.3.5.1 Operation
        2. 8.3.5.2 Power-Up And Soft-Start (CPN)
        3. 8.3.5.3 Power-Down And Discharge (CPN)
        4. 8.3.5.4 Isolation (CPN)
        5. 8.3.5.5 Setting The Output Voltage (CPN)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Enabling and Disabling the Device
    5. 8.5 Programming
      1. 8.5.1 I2C Serial Interface Description
      2. 8.5.2 I2C Interface Protocol
    6. 8.6 Register Maps
      1. 8.6.1 Registers
        1. 8.6.1.1 VPOS Register - Address: 0x00
        2. 8.6.1.2 VNEG Register - Address 0x01
        3. 8.6.1.3 DLYx Register - Address 0x02 (Only valid for TPS65132Sx)
        4. 8.6.1.4 APPS - SEQU - SEQD - DISP - DISN Register - Address 0x03
        5. 8.6.1.5 Control Register - Address 0xFF
      2. 8.6.2 Factory Default Register Value
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Low-current Applications (≤ 40 mA)
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Sequencing
          2. 9.2.1.2.2 Boost Converter Design Procedure
            1. 9.2.1.2.2.1 Inductor Selection (Boost Converter)
            2. 9.2.1.2.2.2 Input Capacitor Selection (Boost Converter)
            3. 9.2.1.2.2.3 Output Capacitor Selection (Boost Converter)
          3. 9.2.1.2.3 Input Capacitor Selection (LDO)
          4. 9.2.1.2.4 Output Capacitor Selection (LDO)
          5. 9.2.1.2.5 Input Capacitor Selection (CPN)
          6. 9.2.1.2.6 Output Capacitor Selection (CPN)
          7. 9.2.1.2.7 Flying Capacitor Selection (CPN)
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Mid-current Applications (≤ 80 mA)
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Boost Converter Design Procedure
            1. 9.2.2.2.1.1 Inductor Selection (Boost Converter)
            2. 9.2.2.2.1.2 Input Capacitor Selection (Boost Converter)
            3. 9.2.2.2.1.3 Output Capacitor Selection (Boost Converter)
          2. 9.2.2.2.2 Input Capacitor Selection (LDO)
          3. 9.2.2.2.3 Output Capacitor Selection (LDO)
          4. 9.2.2.2.4 Input Capacitor Selection (CPN)
          5. 9.2.2.2.5 Output Capacitor Selection (CPN)
          6. 9.2.2.2.6 Flying Capacitor Selection (CPN)
        3. 9.2.2.3 Application Curves
      3. 9.2.3 High-current Applications (≤ 150 mA)
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Sequencing
          2. 9.2.3.2.2 SYNC = HIGH
          3. 9.2.3.2.3 Startup
        3. 9.2.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息
    1. 13.1 CSP 封装概要
      1. 13.1.1 芯片级封装尺寸
      2. 13.1.2 RVC 封装概要

12 器件和文档支持

12.1 器件支持

12.1.1 第三方米6体育平台手机版_好二三四免责声明

TI 发布的与第三方米6体育平台手机版_好二三四或服务有关的信息，不能构成与此类米6体育平台手机版_好二三四或服务或保修的适用性有关的认可，不能构成此类米6体育平台手机版_好二三四或服务单独或与任何 TI 米6体育平台手机版_好二三四或服务一起的表示或认可。

12.2 接收文档更新通知

如需接收文档更新通知，请访问 www.yogichopra.com 网站上的器件米6体育平台手机版_好二三四文件夹。点击右上角的提醒我 (Alert me) 注册后，即可每周定期收到已更改的米6体育平台手机版_好二三四信息。有关更改的详细信息，请查阅已修订文档中包含的修订历史记录。

12.3 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.4 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.5 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。

12.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |