ZHCSCH4H June   2013  – November 2016 TPS65132 , TPS65132S

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5  Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 I2C Interface Timing Requirements / Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Active Discharge
      3. 8.3.3 Boost Converter
        1. 8.3.3.1 Boost Converter Operation
        2. 8.3.3.2 Power-Up And Soft-Start (Boost Converter)
        3. 8.3.3.3 Power-Down (Boost Converter)
        4. 8.3.3.4 Isolation (Boost Converter)
        5. 8.3.3.5 Output Voltage (Boost Converter)
        6. 8.3.3.6 Advanced Power-Save Mode For Light-Load Efficiency And PFM
      4. 8.3.4 LDO Regulator
        1. 8.3.4.1 LDO Operation
        2. 8.3.4.2 Power-Up And Soft-Start (LDO)
        3. 8.3.4.3 Power-Down And Discharge (LDO)
        4. 8.3.4.4 Isolation (LDO)
        5. 8.3.4.5 Setting The Output Voltage (LDO)
      5. 8.3.5 Negative Charge Pump
        1. 8.3.5.1 Operation
        2. 8.3.5.2 Power-Up And Soft-Start (CPN)
        3. 8.3.5.3 Power-Down And Discharge (CPN)
        4. 8.3.5.4 Isolation (CPN)
        5. 8.3.5.5 Setting The Output Voltage (CPN)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Enabling and Disabling the Device
    5. 8.5 Programming
      1. 8.5.1 I2C Serial Interface Description
      2. 8.5.2 I2C Interface Protocol
    6. 8.6 Register Maps
      1. 8.6.1 Registers
        1. 8.6.1.1 VPOS Register - Address: 0x00
        2. 8.6.1.2 VNEG Register - Address 0x01
        3. 8.6.1.3 DLYx Register - Address 0x02 (Only valid for TPS65132Sx)
        4. 8.6.1.4 APPS - SEQU - SEQD - DISP - DISN Register - Address 0x03
        5. 8.6.1.5 Control Register - Address 0xFF
      2. 8.6.2 Factory Default Register Value
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Low-current Applications (≤ 40 mA)
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Sequencing
          2. 9.2.1.2.2 Boost Converter Design Procedure
            1. 9.2.1.2.2.1 Inductor Selection (Boost Converter)
            2. 9.2.1.2.2.2 Input Capacitor Selection (Boost Converter)
            3. 9.2.1.2.2.3 Output Capacitor Selection (Boost Converter)
          3. 9.2.1.2.3 Input Capacitor Selection (LDO)
          4. 9.2.1.2.4 Output Capacitor Selection (LDO)
          5. 9.2.1.2.5 Input Capacitor Selection (CPN)
          6. 9.2.1.2.6 Output Capacitor Selection (CPN)
          7. 9.2.1.2.7 Flying Capacitor Selection (CPN)
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Mid-current Applications (≤ 80 mA)
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Boost Converter Design Procedure
            1. 9.2.2.2.1.1 Inductor Selection (Boost Converter)
            2. 9.2.2.2.1.2 Input Capacitor Selection (Boost Converter)
            3. 9.2.2.2.1.3 Output Capacitor Selection (Boost Converter)
          2. 9.2.2.2.2 Input Capacitor Selection (LDO)
          3. 9.2.2.2.3 Output Capacitor Selection (LDO)
          4. 9.2.2.2.4 Input Capacitor Selection (CPN)
          5. 9.2.2.2.5 Output Capacitor Selection (CPN)
          6. 9.2.2.2.6 Flying Capacitor Selection (CPN)
        3. 9.2.2.3 Application Curves
      3. 9.2.3 High-current Applications (≤ 150 mA)
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Sequencing
          2. 9.2.3.2.2 SYNC = HIGH
          3. 9.2.3.2.3 Startup
        3. 9.2.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息
    1. 13.1 CSP 封装概要
      1. 13.1.1 芯片级封装尺寸
      2. 13.1.2 RVC 封装概要

13 机械、封装和可订购信息

以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。

13.1 CSP 封装概要

TPS65132 pckg_info_slvsbm1.gif

13.1.1 芯片级封装尺寸

TPS65132 器件采用 15 凸点芯片级封装（YFF，NanoFree™)。封装尺寸如下：

• D = 2108μm ±30μm

• D = 1514μm ±30μm

13.1.2 RVC 封装概要

TPS65132 pckg_info_RVC_slvsbm1.gif
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