ZHCSDM2A November   2014  – December 2014 TPS63024 , TPS630241 , TPS630242

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Undervoltage Lockout (UVLO)
      2. 7.3.2 Output Discharge Function
      3. 7.3.3 Thermal Shutdown
      4. 7.3.4 Softstart
      5. 7.3.5 Short Circuit Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Control Loop Description
      2. 7.4.2 Power Save Mode Operation
      3. 7.4.3 Current Limit
      4. 7.4.4 Supply and Ground
      5. 7.4.5 Device Enable
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Filter Design
        2. 8.2.2.2 Inductor Selection
        3. 8.2.2.3 Capacitor Selection
          1. 8.2.2.3.1 Input Capacitor
          2. 8.2.2.3.2 Output Capacitor
        4. 8.2.2.4 Setting The Output Voltage
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 文档支持
      1. 11.2.1 相关文档　
    3. 11.3 相关链接
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

6 Specifications

6.1 Absolute Maximum Ratings(4)

over junction temperature range (unless otherwise noted)
VALUE
MIN MAX UNIT
Voltage(1) VIN, L1, EN, VINA, PFM/PWM –0.3 7 V
VOUT, FB –0.3 4 V
L2(2) –0.3 4 V
L2(3) -0.3 5.5 V
Input current Continuos average current into L1(5) 2.7 A
TJ Operating junction temperature –40 125 °C
Tstg Storage temperature range –65 150
(1) All voltage values are with respect to network ground pin.
(2) DC voltage rating.
(3) AC transient voltage rating.
(4) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(5) Maximum continuos average input current 3.5A, under those condition do not exceed 105°C for more than 25% operating time.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±700
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions(1)

MIN TYP MAX UNIT
VIN Input Voltage Range 2.3 5.5 V
VOUT Output Voltage 2.5 3.6 V
L Inductance (3) 0.5 1 1.3 µH
Cout Output Capacitance(2) 16 µF
TA Operating ambient temperature –40 85 °C
TJ Operating virtual junction temperature –40 125 °C
(1) Refer to the Application Information section for further information
(2) Due to the dc bias effect of ceramic capacitors, the effective capacitance is lower then the nominal value when a voltage is applied. This is why the capacitance is specified to allow the selection of the nominal capacitor required with the dc bias effect for this type of capacitor. The nominal value given matches a typical capacitor to be chosen to meet the minimum capacitance required.
(3) Effective inductance value at operating condition. The nominal value given matches a typical inductor to be chosen to meet the inductance required.

6.4 Thermal Information

THERMAL METRIC(1) TPS63024x UNIT
YFF
20 PINS
RθJA Junction-to-ambient thermal resistance 53.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.5
RθJB Junction-to-board thermal resistance 10.1
ψJT Junction-to-top characterization parameter 1.4
ψJB Junction-to-board characterization parameter 9.8
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VIN=2.3V to 5.5V, TJ= –40°C to 125°C, typical values are at TA=25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range 2.3 5.5 V
VIN_Min Minimum input voltage to turn on into full load RLOAD= 2.2Ω 2.7 V
IQ Quiescent current VIN IOUT=0mA, EN=VIN=3.6V, VOUT=3.3V TJ=-40°C to 85°C, not switching 35 70 μA
VOUT 12 μA
Isd Shutdown current EN=low, TJ=-40°C to 85°C 0.1 2 μA
UVLO Under voltage lockout threshold VIN falling 1.6 1.7 2 V
Under voltage lockout hysteresis 70 mV
Thermal shutdown Temperature rising 140 °C
LOGIC SIGNALS EN, PFM/PWM
VIH High level input voltage VIN=2.3V to 5.5V 1.2 V
VIL Low level input voltage VIN=2.3V to 5.5V 0.4 V
Ilkg Input leakage current PFM/PWM, EN=GND or VIN 0.01 0.2 μA
OUTPUT
VOUT Output Voltage range 2.5 3.6 V
VFB Feedback regulation voltage TPS63024 0.8 V
VFB Feedback voltage accuracy PWM mode, TPS63024 -1% 1%
VFB Feedback voltage accuracy (2) PFM mode, TPS63024 -1% 1.3% +3%
VOUT Output voltage accuracy PWM mode, TPS630241 2.871 2.9 2.929 V
VOUT Output voltage accuracy(2) PFM mode, TPS630241 2.871 2.938 2.987 V
VOUT Output voltage accuracy PWM mode, TPS630242 3.267 3.3 3.333 V
VOUT Output voltage accuracy(2) PFM mode, TPS630242 3.267 3.343 3.399 V
IPWM/PFM Output current to enter PFM mode VIN =3V; VOUT = 3.3V 350 mA
IFB Feedback input bias current VFB = 0.8V 10 100 nA
RDS_Buck(on) High side FET on-resistance VIN=3.0V, VOUT=3.3V 35 mΩ
Low side FET on-resistance VIN=3.0V, VOUT=3.3V 50 mΩ
RDS_Boost(on) High side FET on-resistance VIN=3.0V, VOUT=3.3V 25 mΩ
Low side FET on-resistance VIN=3.0V, VOUT=3.3V 50 mΩ
IIN Average input current limit (1) VIN=3.0V, VOUT=3.3V TJ= 25°C to 125°C 2.12 3 3.54 A
fs Switching Frequency 2.5 MHz
RON_DISC Discharge ON-Resistance EN=low 120 Ω
Line regulation VIN=2.8V to 5.5V, IOUT=1.5A 7.4 mV/V
Load regulation VIN=3.6V,IOUT=0A to 1.5A 2.5 mV/A
(1) For variation of this parameter with Input voltage and temperature see Figure 8. To calculate minimum output current in a specific working point see Figure 8 and Equation 1 trough Equation 4.
(2) Conditions: L=1 µH, COUT= 2 × 22µF.

6.6 Timing Requirements

VIN= 2.3V to 5.5V, TJ= –40°C to 125°C, typical values are at TA= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT
tSS Softstart time EN=low to high, Buck mode VIN=3.6V, VOUT=3.3V, IOUT=1.5A 450 µs
EN=low to high, Boost mode VIN=2.8V, VOUT=3.3V, IOUT=1.5A 700 µs
td Start up delay Time from when EN=high to when device starts switching 100 µs

6.7 Typical Characteristics

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TPS63024 TPS630241 TPS630242 Figure1rev2_SLVSCK8.gif
Figure 1. High Side FET On-Resistance vs VIN
TPS63024 TPS630241 TPS630242 figure1rev1_SLVSCK8.gif
Figure 2. Quiescent Current vs Input Voltage
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