ZHCSE44C august 2015 – may 2023 ISO5852S
PRODUCTION DATA
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
VCC1 | Supply-voltage input side | GND1 – 0.3 | 6 | V | ||
VCC2 | Positive supply-voltage output side | (VCC2 – GND2) | –0.3 | 35 | V | |
VEE2 | Negative supply-voltage output side | (VEE2 – GND2) | –17.5 | 0.3 | V | |
V(SUP2) | Total-supply output voltage | (VCC2 – VEE2) | –0.3 | 35 | V | |
V(OUTH) | Positive gate-driver output voltage | VEE2 – 0.3 | VCC2 + 0.3 | V | ||
V(OUTL) | Negative gate-driver output voltage | VEE2 – 0.3 | VCC2 + 0.3 | V | ||
I(OUTH) | Gate-driver high output current | Maximum pulse width = 10 μs, Maximum duty cycle = 0.2%) | 2.7 | A | ||
I(OUTL) | Gate-driver low output current | Maximum pulse width = 10 μs, Maximum duty cycle = 0.2%) | 5.5 | A | ||
V(LIP) | Voltage at IN+, IN–, FLT, RDY, RST | GND1 – 0.3 | VCC1 + 0.3 | V | ||
I(LOP) | Output current of FLT, RDY | 10 | mA | |||
V(DESAT) | Voltage at DESAT | GND2 – 0.3 | VCC2 + 0.3 | V | ||
V(CLAMP) | Clamp voltage | VEE2 – 0.3 | VCC2 + 0.3 | V | ||
TJ | Junction temperature | –40 | 150 | °C | ||
TSTG | Storage temperature | –65 | 150 | °C |